2 N-CH MOSFET 30V 8A 16mR SOIC Product overview: SI4622DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8A, SOIC, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI4622DY-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1095973-SI4622DY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.3W, 3.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 2458pF @ 15V
Maximum Rds On at Id,Vgs: 16 mOhm @ 9.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-SI4622DY-T1-E3 | 1095973-SI4622DY-T1-E3 |
| Product Name | 30V 8A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4622DY-T1-E3 |
| Polarity | N-Channel | N-Channel |
| PD | 3100 milliwatts | 3300 to 3100 milliwatts |
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |