Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4622DY-T1-E3 SI4622DY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 1095973-SI4622DY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 3.3W, 3.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8A Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2458pF @ 15V Maximum Rds On at Id,Vgs: 16 mOhm @ 9.6A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management
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Description
Manufacturer: Vishay Win Source Part Number: 1095973-SI4622DY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 3.3W, 3.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8A Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2458pF @ 15V Maximum Rds On at Id,Vgs: 16 mOhm @ 9.6A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4622DY-T1-E3 - 1095973-SI4622DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4622DY-T1-E3
1095973-SI4622DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4622DY-T1-E3 1095973-SI4622DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 1095973-SI4622DY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 3.3W, 3.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8A Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2458pF @ 15V Maximum Rds On at Id,Vgs: 16 mOhm @ 9.6A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 1095973-SI4622DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.3W, 3.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 2458pF @ 15V
Maximum Rds On at Id,Vgs: 16 mOhm @ 9.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1095973-SI4622DY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4622DY-T1-E3
Polarity N-Channel
V(BR)DSS 30 volts
PD 3300 to 3100 milliwatts
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