Manufacturer: Vishay Siliconix
Win Source Part Number: 801093-SI4618DY-T1-G
Packaging: Reel
Mounting Style: SMD
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.98W, 4.16W
Part Status: Obsolete (End Of Life)
Supplier Device Package: 8-SO
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-SOIC
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 17mOhm at 8A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 44nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1535pF at 15V
Current - Continuous Drain (Id) at 25°C: 8A, 15.2A
Vgs(th) (Maximum) at Id: 2.5V at 1mA
MOSFET 2N-CH 30V 8A/15.2A 8SOIC Product overview: SI4618DY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8A, 15.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8A, 15.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4618DY-T1-GE3 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Half Bridge) 30V 8A, 15.2A 1.98W, 4.16W Surface Mount 8-SOIC
MOSFET 2N-CH 30V 8A 8SO
MOSFET 30V 8/15.2A DUAL NCH MOSFET w/Shottky
MOSFET 2N-CH 30V 8A/15.2A 8SOIC
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 801093-SI4618DY-T1-GE3 | 289-SI4618DY-T1-GE3 | SI4618DY-T1-GE3-ND | SI4618DY-T1-GE3 | 880-SI4618DY-T1-GE3 | SI4618DY-T1-GE3 |
| Product Name | FETs - Arrays - SI4618DY-T1-GE3 | 30V 8A 15.2A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET 30V 8/15.2A DUAL NCH MOSFET w/Shottky | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Half Bridge) | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3 | Tape & Reel (TR) | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | ||
| Packing Method | Tape Reel; Reel | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR) | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
