MOSFET N/P-CH 40V 6.8A 8SOIC
Trans MOSFET N/P-CH 40V 5.6A/4.7A
N/P-Channel JFET, 40V, 6.8A, 37mR, SOIC Product overview: SI4599DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 40V, 6.8A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 6.8A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4599DY-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028515-SI4599DY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: Si4599DY
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3W, 3.1W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 6.8A, 5.8A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 640pF @ 20V
Maximum Rds On at Id,Vgs: 35.5 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): DMC4029SSDQ-13; DMC4029SSD-13; AO4614;
Introduction Date: November 03, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Mosfet Array N and P-Channel 40V 6.8A, 5.8A 3W, 3.1W Surface Mount 8-SOIC
Mosfet Array N and P-Channel 40V 6.8A, 5.8A 3W, 3.1W Surface Mount 8-SOIC
Mosfet Array N and P-Channel 40V 6.8A, 5.8A 3W, 3.1W Surface Mount 8-SOIC
MOSFET -40V Vds 20V Vgs SO-8 N&P PAIR
Dual MOSFET, N and P Channel, 6.8 A, 40 V, 29.5 mohm, 10 V, 1.4 V RoHS Compliant: Yes
MOSFET, N & P CH, 40V, 6.8A, SOIC-8, FULL REEL; Transistor Polarity:Complementa
MOSFET N/P-CH 40V 6.8A 8SOIC
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI4599DY-T1-GE3 | 8123233P | 8123233 | 278-SI4599DY-T1-GE3 | 028515-SI4599DY-T1-GE3 | SI4599DY-T1-GE3CT-ND | SI4599DY-T1-GE3 | 55R1926 | 15R5059 | SI4599DY-T1-GE3 |
| Product Name | FET, MOSFET Arrays | MOSFETs | MOSFETs | P-Channel 40V 6.8A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4599DY-T1-GE3 | FET, MOSFET Arrays | MOSFET | Dual Mosfet, N And P Channel, 6.8 A, 40 V, 29.5 Mohm, 10 V, 1.4 V Rohs Compliant Vishay | Mosfet, N & P Ch, 40V, 6.8A, Soic-8, Full Reel; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; N and P-Channel | N-Channel; P-Channel | P-Channel | P-Channel | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 40 volts | 40 volts | ||||||||
| IDSS | 6800 milliamps | 6800 milliamps | ||||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
