MOSFET N/P CHAN 100V SO8 DUAL
Small Signal Field-Effect Transistor, 5.6A I(D), 100V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Product overview: SI4590DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, P-Channel, 5.6A, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 5.6A, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4590DY-T1-GE3 can be used for catalog matching and distributor lookup.
Mosfet Array N and P-Channel 100V 3.4A, 2.8A 2.4W, 3.4W Surface Mount 8-SOIC
Mosfet Array N and P-Channel 100V 3.4A, 2.8A 2.4W, 3.4W Surface Mount 8-SOIC
Mosfet Array N and P-Channel 100V 3.4A, 2.8A 2.4W, 3.4W Surface Mount 8-SOIC
Manufacturer: Vishay Siliconix
Win Source Part Number: 794259-SI4590DY-T1-G
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
FET Type: N and P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Power - Max: 2.4W, 3.4W
Family Name: SI4590DY
Categories: Discrete Semiconductor Products
Manufacturer Package: 8-SO
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 11.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 360pF @ 50V
Rds On (Maximum) @ Id, Vgs: 57 mOhm @ 2A, 10V
Alternative Parts (Cross-Reference): ZXMC10A816N8TC; ZXMC10A816N8;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
MOSFET N/P-CH 100V 3.4A 8SOIC
DUAL MOSFET,N/P-CH, 100V, 5.6A, SOIC ROHS COMPLIANT: YES
MOSFET -100V Vds 20V Vgs SO-8 N&P PAIR
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4590DY-T1-GE3 | 278-SI4590DY-T1-GE3 | SI4590DY-T1-GE3CT-ND | 794259-SI4590DY-T1-GE3 | SI4590DY-T1-GE3 | 57AJ0445 | SI4590DY-T1-GE3 |
| Product Name | FET, MOSFET Arrays | N-Channel P-Channel 5.6A 100V MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4590DY-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual Mosfet,n/p-Ch, 100V, 5.6A, Soic Rohs Compliant Vishay | MOSFET |
| Polarity | P-Channel; N and P-Channel | P-Channel | |||||
| V(BR)DSS | 100 volts | ||||||
| IDSS | 3400 milliamps | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
