Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4569DY-T1-E3 SI4569DY-T1-E3

Manufacturer: Vishay
Win Source Part Number: 138402-SI4569DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.1W, 3.2W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 7.6A, 7.9A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 32nC @ 10V
Max Input Capacitance: 855pF @ 20V
Maximum Rds On at Id,Vgs: 27 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management

N/P-CH MOSFET 40V 6.1A 27mR SOIC Surface Mount Product overview: SI4569DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 40V, 6.1A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 40V, 6.1A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4569DY-T1-E3 can be used for catalog matching and distributor lookup.

Mosfet Array N and P-Channel 40V 7.6A, 7.9A 3.1W, 3.2W Surface Mount 8-SOIC