Vishay Intertechnology, Inc. FET, MOSFET Arrays SI4567DY-T1-GE3

Mosfet Array N and P-Channel 40V 5A, 4.4A 2.75W, 2.95W Surface Mount 8-SOIC

MOSFET N/P-CH 40V 5A/4.4A 8SOIC Product overview: SI4567DY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 5A, 4.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 5A, 4.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4567DY-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 712133-SI4567DY-T1-GE3
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
FET Type: N and P-Channel
FET Feature: Standard
Current - Continuous Drain (Id) @ 25°C: 5A, 4.4A
Power - Max: 2.75W, 2.95W
Part Status: Obsolete(EOL)
Family Name: Si4567DY
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.vishay.com
Manufacturer Package: 8-SO
Drain Source Voltage: 40V
Vgs(th) (Maximum) @ Id: 2.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 355pF @ 20V
Rds On (Maximum) @ Id, Vgs: 60 mOhm @ 4.1A, 10V
Alternative Parts (Cross-Reference): ZXMC4A16DN8; ZXMC4A16DN8TA; Si4599DY-T1-GE3;
Introduction Date: December 02, 2005
ECCN: EAR99
Estimated EOL Date: End of life (Obsolete)
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited