Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4563DY-T1-E3 SI4563DY-T1-E3

Manufacturer: Vishay
Win Source Part Number: 042603-SI4563DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.25W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 85nC @ 10V
Max Input Capacitance: 2390pF @ 20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management

MOSFET N/P-CH 40V 8A 8SOIC Product overview: SI4563DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4563DY-T1-E3 can be used for catalog matching and distributor lookup.