Manufacturer: Vishay
Win Source Part Number: 042603-SI4563DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.25W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 85nC @ 10V
Max Input Capacitance: 2390pF @ 20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
MOSFET N/P-CH 40V 8A 8SOIC
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 042603-SI4563DY-T1-E3 | SI4563DY-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4563DY-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | |
| V(BR)DSS | 40 volts | |
| PD | 3250 milliwatts |
