Manufacturer: Vishay
Win Source Part Number: 321959-SI4562DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 1.6V @ 250μA
Max Gate Charge: 50nC @ 4.5V
Maximum Rds On at Id,Vgs: 25 mOhm @ 7.1A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
MOSFET N/P-CH 20V 8-SOIC
MOSFET N/P-CH 20V 8SOIC Product overview: SI4562DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4562DY-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET N/P-CH 20V 8SOIC
DUAL N/P CHANNEL MOSFET, 20V, 7.1A/-6.2A, SOIC-8, FULL REEL; Transistor Polarity:Complementa
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 321959-SI4562DY-T1-E3 | SI4562DY-T1-E3 | 289-SI4562DY-T1-E3 | SI4562DY-T1-E3 | 71T8049 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4562DY-T1-E3 | FET, MOSFET Arrays | 20V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual N/p Channel Mosfet, 20V, 7.1A/-6.2A, Soic-8, Full Reel; Transistor Polarity Vishay |
| Polarity | P-Channel | P-Channel; N and P-Channel | P-Channel | ||
| V(BR)DSS | 20 volts | 20 volts | |||
| PD | 2000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | TO-3 |
