Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4562DY-T1-E3 SI4562DY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 321959-SI4562DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 20V Gate-Source Threshold Voltage: 1.6V @ 250μA Max Gate Charge: 50nC @ 4.5V Maximum Rds On at Id,Vgs: 25 mOhm @ 7.1A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 321959-SI4562DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 20V Gate-Source Threshold Voltage: 1.6V @ 250μA Max Gate Charge: 50nC @ 4.5V Maximum Rds On at Id,Vgs: 25 mOhm @ 7.1A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4562DY-T1-E3 - 321959-SI4562DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4562DY-T1-E3
321959-SI4562DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4562DY-T1-E3 321959-SI4562DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 321959-SI4562DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 20V Gate-Source Threshold Voltage: 1.6V @ 250μA Max Gate Charge: 50nC @ 4.5V Maximum Rds On at Id,Vgs: 25 mOhm @ 7.1A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 321959-SI4562DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 1.6V @ 250μA
Max Gate Charge: 50nC @ 4.5V
Maximum Rds On at Id,Vgs: 25 mOhm @ 7.1A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
FET, MOSFET Arrays - SI4562DY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI4562DY-T1-E3
FET, MOSFET Arrays SI4562DY-T1-E3
MOSFET N/P-CH 20V 8-SOIC

MOSFET N/P-CH 20V 8-SOIC

Supplier's Site Datasheet
20V MOSFET Transistor 289-SI4562DY-T1-E3
MOSFET N/P-CH 20V 8SOIC Product overview: SI4562DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4562DY-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET N/P-CH 20V 8SOIC Product overview: SI4562DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4562DY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4562DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4562DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4562DY-T1-E3
MOSFET N/P-CH 20V 8SOIC

MOSFET N/P-CH 20V 8SOIC

Supplier's Site
Dual N/p Channel Mosfet, 20V, 7.1A/-6.2A, Soic-8, Full Reel; Transistor Polarity Vishay - 71T8049 - Newark, An Avnet Company
Chicago, IL, United States
Dual N/p Channel Mosfet, 20V, 7.1A/-6.2A, Soic-8, Full Reel; Transistor Polarity Vishay
71T8049
Dual N/p Channel Mosfet, 20V, 7.1A/-6.2A, Soic-8, Full Reel; Transistor Polarity Vishay 71T8049
DUAL N/P CHANNEL MOSFET, 20V, 7.1A/-6.2A, SOIC-8, FULL REEL; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.1A; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage:4.5VRoHS Compliant: Yes

DUAL N/P CHANNEL MOSFET, 20V, 7.1A/-6.2A, SOIC-8, FULL REEL; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.1A; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage:4.5VRoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 321959-SI4562DY-T1-E3 SI4562DY-T1-E3 289-SI4562DY-T1-E3 SI4562DY-T1-E3 71T8049
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4562DY-T1-E3 FET, MOSFET Arrays 20V MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Dual N/p Channel Mosfet, 20V, 7.1A/-6.2A, Soic-8, Full Reel; Transistor Polarity Vishay
Polarity P-Channel P-Channel; N and P-Channel P-Channel
V(BR)DSS 20 volts 20 volts
PD 2000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) TO-3
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