Manufacturer: Vishay
Win Source Part Number: 042602-SI4561DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3W, 3.3W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 6.8A, 7.2A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 640pF @ 20V
Maximum Rds On at Id,Vgs: 35.5 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
MOSFET N/P-CH 40V 6.8A 8SOIC
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 042602-SI4561DY-T1-E3 | SI4561DY-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4561DY-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | |
| V(BR)DSS | 40 volts | |
| PD | 3000 to 3300 milliwatts |
