Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4561DY-T1-E3 SI4561DY-T1-E3

Manufacturer: Vishay
Win Source Part Number: 042602-SI4561DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3W, 3.3W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 6.8A, 7.2A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 640pF @ 20V
Maximum Rds On at Id,Vgs: 35.5 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

MOSFET N/P-CH 40V 6.8A 8SOIC Product overview: SI4561DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 6.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 6.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4561DY-T1-E3 can be used for catalog matching and distributor lookup.