MOSFET N/P-CH 60V 5.3A 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 028514-SI4559ADY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.1W, 3.4W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5.3A, 3.9A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 665pF @ 15V
Maximum Rds On at Id,Vgs: 58 mOhm @ 4.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Mosfet Array N and P-Channel 60V 5.3A, 3.9A 3.1W, 3.4W Surface Mount 8-SOIC
Mosfet Array N and P-Channel 60V 5.3A, 3.9A 3.1W, 3.4W Surface Mount 8-SOIC
Mosfet Array N and P-Channel 60V 5.3A, 3.9A 3.1W, 3.4W Surface Mount 8-SOIC
2-Ch N/P-Ch MOSFET 60V 3.9A 58mR SO Surface Mount Product overview: SI4559ADY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 60V, 3.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 3.9A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI4559ADY-T1-GE
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| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4559ADY-T1-GE3 | 028514-SI4559ADY-T1-GE3 | SI4559ADY-T1-GE3TR-ND | 2088-SI4559ADY-T1-GE3 | 7103345 | 7103345P | SI4559ADY-T1-GE3 | SI4559ADY-T1-GE3 | 16P3742 | 57AJ0444 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4559ADY-T1-GE3 | FET, MOSFET Arrays | SMD 60V 3.9A MOSFET Transistor | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Npn/pnp Mosfet, 60V, Soic; Transistor Polarity Vishay | Mosfet, Dual, Complement, 60V, 4.5A/soic Rohs Compliant Vishay |
| Polarity | P-Channel; N and P-Channel | P-Channel | N-Channel; P-Channel | P-Channel | P-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||||
| IDSS | 5300 milliamps | 4500 milliamps | ||||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
