2-Ch N/P-Ch MOSFET 60V 3.9A 58mR SO Surface Mount Product overview: SI4559ADY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 60V, 3.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 3.9A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI4559ADY-T1-GE
MOSFET N/P-CH 60V 5.3A 8-SOIC
MOSFET Dual N/P-Channel 60V 4.3A/3A SO8
MOSFET Dual N/P-Channel 60V 4.3A/3A SO8
MOSFET Dual N/P-Channel 60V 4.3A/3A SO8
Manufacturer: Vishay
Win Source Part Number: 028514-SI4559ADY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.1W, 3.4W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5.3A, 3.9A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 665pF @ 15V
Maximum Rds On at Id,Vgs: 58 mOhm @ 4.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Mosfet Array N and P-Channel 60V 5.3A, 3.9A 3.1W, 3.4W Surface Mount 8-SOIC
Mosfet Array N and P-Channel 60V 5.3A, 3.9A 3.1W, 3.4W Surface Mount 8-SOIC
Mosfet Array N and P-Channel 60V 5.3A, 3.9A 3.1W, 3.4W Surface Mount 8-SOIC
NPN/PNP MOSFET, 60V, SOIC; Transistor Polarity:Complementa
MOSFET, DUAL, COMPLEMENT, 60V, 4.5A/SOIC ROHS COMPLIANT: YES
NPN/PNP MOSFET, 60V, SOIC, FULL REEL; Transistor Polarity:Complementa
MOSFET -60V Vds 20V Vgs SO-8 N&P PAIR
MOSFET N/P-CH 60V 5.3A 8SOIC
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2088-SI4559ADY-T1-GE3 | SI4559ADY-T1-GE3 | 7103345 | 7103345P | 028514-SI4559ADY-T1-GE3 | SI4559ADY-T1-GE3TR-ND | 16P3742 | 57AJ0444 | SI4559ADY-T1-GE3 | SI4559ADY-T1-GE3 |
| Product Name | SMD 60V 3.9A MOSFET Transistor | FET, MOSFET Arrays | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4559ADY-T1-GE3 | FET, MOSFET Arrays | Npn/pnp Mosfet, 60V, Soic; Transistor Polarity Vishay | Mosfet, Dual, Complement, 60V, 4.5A/soic Rohs Compliant Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; P-Channel | P-Channel; N and P-Channel | P-Channel | P-Channel | P-Channel | |||||
| PD | 3400 milliwatts | 3100 to 3400 milliwatts | ||||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 60 volts | 60 volts |
