Vishay Precision Group FET, MOSFET Arrays SI4559ADY-T1-E3

MOSFET N/P-CH 60V 5.3A 8-SOIC

Mosfet Array N and P-Channel 60V 5.3A, 3.9A 3.1W, 3.4W Surface Mount 8-SOIC

Mosfet Array N and P-Channel 60V 5.3A, 3.9A 3.1W, 3.4W Surface Mount 8-SOIC

Mosfet Array N and P-Channel 60V 5.3A, 3.9A 3.1W, 3.4W Surface Mount 8-SOIC

N/P-CH MOSFET 60V 3.9A 100mR SOIC Product overview: SI4559ADY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3.9A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4559ADY-T1-E3 can be used for catalog matching and distributor lookup.

N/P-Ch MOSFET SO-8 60V 58/120mohm @ 10V

N/P-Ch MOSFET SO-8 60V 58/120mohm @ 10V

N/P-Ch MOSFET SO-8 60V 58/120mohm @ 10V

Manufacturer: Vishay
Win Source Part Number: 064496-SI4559ADY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.1W, 3.4W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5.3A, 3.9A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 665pF @ 15V
Maximum Rds On at Id,Vgs: 58 mOhm @ 4.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management