N/P-CH MOSFET 60V 3.9A 100mR SOIC Product overview: SI4559ADY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3.9A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4559ADY-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET N/P-CH 60V 5.3A 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 064496-SI4559ADY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.1W, 3.4W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5.3A, 3.9A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 665pF @ 15V
Maximum Rds On at Id,Vgs: 58 mOhm @ 4.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
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| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4559ADY-T1-E3 | SI4559ADY-T1-E3 | 064496-SI4559ADY-T1-E3 | 1807294 | SI4559ADY-T1-E3DKR-ND | SI4559ADY-T1-E3 | SI4559ADY-T1-E3 | 73W9412 | 75M5474 |
| Product Name | 60V 3.9A SOIC MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4559ADY-T1-E3 | MOSFETs | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N And P Channel, 60V, 0.046Ohm, 5.3A, Soic-8, Full Reel; Transistor Polarity Vishay | Npn/pnp Mosfet, 60V, Soic; Transistor Polarity Vishay |
| Polarity | N-Channel; P-Channel | P-Channel; N and P-Channel | P-Channel | P-Channel | |||||
| PD | 2000 milliwatts | 3100 to 3400 milliwatts | |||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 60 volts | 60 volts |
