Vishay Intertechnology, Inc. Discrete Semiconductor Products SI4532DY-T1

Description
Manufacturer: Vishay Win Source Part Number: 189916-SI4532DY-T1 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Arrays Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Manufacturer Device Package: 8-SO FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.5A Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250μA Gate Charge (Qg) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) @ Vds: 235pF @ 10V Power - Max: 900mW Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 189916-SI4532DY-T1 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Arrays Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Manufacturer Device Package: 8-SO FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.5A Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250μA Gate Charge (Qg) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) @ Vds: 235pF @ 10V Power - Max: 900mW Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
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Discrete Semiconductor Products - 189916-SI4532DY-T1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
189916-SI4532DY-T1
Discrete Semiconductor Products 189916-SI4532DY-T1
Manufacturer: Vishay Win Source Part Number: 189916-SI4532DY-T1 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Arrays Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Manufacturer Device Package: 8-SO FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.5A Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250μA Gate Charge (Qg) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) @ Vds: 235pF @ 10V Power - Max: 900mW Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 189916-SI4532DY-T1
Category: Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Arrays
Packaging: Reel(TR)
Mounting Style: SMD/SMT
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Manufacturer Device Package: 8-SO
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.5A
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250μA
Gate Charge (Qg) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) @ Vds: 235pF @ 10V
Power - Max: 900mW
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 189916-SI4532DY-T1
Product Name Discrete Semiconductor Products
Polarity P-Channel
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