Manufacturer: Vishay
Win Source Part Number: 189917-SI4532DY-T1-E
Category: Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Arrays
Packaging: Reel(TR)
Mounting Style: SMD/SMT
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Manufacturer Device Package: 8-SO
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.5A
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250μA
Gate Charge (Qg) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) @ Vds: 235pF @ 10V
Power - Max: 900mW
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
MOSFET 30 Volt 4.9/3.9A 2W Product overview: SI4532DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.9A, 2W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 3.9A, 2W, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4532DY-T1-E3 can be used for catalog matching and distributor lookup.
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 189917-SI4532DY-T1-E3 | 289-SI4532DY-T1-E3 |
| Product Name | Discrete Semiconductor Products | 3.9A 2W MOSFET Transistor |
| Polarity | P-Channel | N-Channel; P-Channel |