MOSFET N/P-CH 30V 6A 8-SOIC
MOSFET Dual N/P-Ch 30V 4.9A/3.4A SOIC8
MOSFET Dual N/P-Ch 30V 4.9A/3.4A SOIC8
MOSFET Dual N/P-Ch 30V 4.9A/3.4A SOIC8
Manufacturer: Vishay
Win Source Part Number: 028509-SI4532CDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Family Name: Si4532CDY
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.78W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A, 4.3A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 9nC @ 10V
Max Input Capacitance: 305pF @ 15V
Maximum Rds On at Id,Vgs: 47 mOhm @ 3.5A, 10V
Alternative Parts (Cross-Reference): AUIRF7309Q; AUIRF7309QTR; IRF7379QPBF;
Introduction Date: April 09, 2009
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
N/P-Channel JFET, 30V, 6A, SOIC, 2-Element Product overview: SI4532CDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4532CDY-T1-GE3
Mosfet Array N and P-Channel 30V 6A, 4.3A 2.78W Surface Mount 8-SOIC
Mosfet Array N and P-Channel 30V 6A, 4.3A 2.78W Surface Mount 8-SOIC
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| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4532CDY-T1-GE3 | 7879020P | 7879020 | 028509-SI4532CDY-T1-GE3 | 278-SI4532CDY-T1-GE3 | SI4532CDY-T1-GE3CT-ND | SI4532CDY-T1-GE3 | SI4532CDY-T1-GE3 | 15R5049 |
| Product Name | FET, MOSFET Arrays | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4532CDY-T1-GE3 | P-Channel 30V 6A SOIC MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Np Channel, 30V, 6/-4.3A, Soic-8, Full Reel; Transistor Polarity Vishay |
| Polarity | P-Channel; N and P-Channel | P-Channel | N-Channel; P-Channel | P-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 30 volts | 30 volts | |||||||
| IDSS | 6000 milliamps | 6000 milliamps | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
