Manufacturer: Vishay
Win Source Part Number: 211640-SI4532ADY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.13W, 1.2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.7A, 3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 16nC @ 10V
Maximum Rds On at Id,Vgs: 53 mOhm @ 4.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
MOSFET N/P-CH 30V 3.7A/3A 8SOIC Product overview: SI4532ADY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.7A, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.7A, 3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4532ADY-T1-GE3
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| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 211640-SI4532ADY-T1-GE3 | 289-SI4532ADY-T1-GE3 | SI4532ADY-T1-GE3TR-ND | SI4532ADY-T1-GE3 | SI4532ADY-T1-GE3 | 880-SI4532ADY-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4532ADY-T1-GE3 | 30V 3.7A 3A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N/P-CH 30V 3.7A 8-SOIC |
| Polarity | P-Channel | P-Channel; N and P-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||
| PD | 1130 to 1200 milliwatts | 1200 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3; 8-SO | Tape & Reel (TR) | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) |