Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4532ADY-T1-GE3 SI4532ADY-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 211640-SI4532ADY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.13W, 1.2W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.7A, 3A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 16nC @ 10V Maximum Rds On at Id,Vgs: 53 mOhm @ 4.9A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 211640-SI4532ADY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.13W, 1.2W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.7A, 3A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 16nC @ 10V Maximum Rds On at Id,Vgs: 53 mOhm @ 4.9A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4532ADY-T1-GE3 - 211640-SI4532ADY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4532ADY-T1-GE3
211640-SI4532ADY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4532ADY-T1-GE3 211640-SI4532ADY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 211640-SI4532ADY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.13W, 1.2W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.7A, 3A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 16nC @ 10V Maximum Rds On at Id,Vgs: 53 mOhm @ 4.9A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 211640-SI4532ADY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.13W, 1.2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.7A, 3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 16nC @ 10V
Maximum Rds On at Id,Vgs: 53 mOhm @ 4.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
30V 3.7A 3A MOSFET Transistor
289-SI4532ADY-T1-GE3
30V 3.7A 3A MOSFET Transistor 289-SI4532ADY-T1-GE3
MOSFET N/P-CH 30V 3.7A/3A 8SOIC Product overview: SI4532ADY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.7A, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.7A, 3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4532ADY-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET N/P-CH 30V 3.7A/3A 8SOIC Product overview: SI4532ADY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.7A, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.7A, 3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4532ADY-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - SI4532ADY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4532ADY-T1-GE3TR-ND
FET, MOSFET Arrays SI4532ADY-T1-GE3TR-ND
Mosfet Array N and P-Channel 30V 3.7A, 3A 1.13W, 1.2W Surface Mount 8-SOIC

Mosfet Array N and P-Channel 30V 3.7A, 3A 1.13W, 1.2W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - SI4532ADY-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI4532ADY-T1-GE3
FET, MOSFET Arrays SI4532ADY-T1-GE3
MOSFET N/P-CH 30V 3.7A 8-SOIC

MOSFET N/P-CH 30V 3.7A 8-SOIC

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4532ADY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4532ADY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4532ADY-T1-GE3
MOSFET N/P-CH 30V 3.7A/3A 8SOIC

MOSFET N/P-CH 30V 3.7A/3A 8SOIC

Supplier's Site
MOSFET N/P-CH 30V 3.7A 8-SOIC - 880-SI4532ADY-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET N/P-CH 30V 3.7A 8-SOIC
880-SI4532ADY-T1-GE3
MOSFET N/P-CH 30V 3.7A 8-SOIC 880-SI4532ADY-T1-GE3
MOSFET N/P-CH 30V 3.7A 8-SOIC

MOSFET N/P-CH 30V 3.7A 8-SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 211640-SI4532ADY-T1-GE3 289-SI4532ADY-T1-GE3 SI4532ADY-T1-GE3TR-ND SI4532ADY-T1-GE3 SI4532ADY-T1-GE3 880-SI4532ADY-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4532ADY-T1-GE3 30V 3.7A 3A MOSFET Transistor FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N/P-CH 30V 3.7A 8-SOIC
Polarity P-Channel P-Channel; N and P-Channel
V(BR)DSS 30 volts 30 volts 30 volts
PD 1130 to 1200 milliwatts 1200 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO Tape & Reel (TR) "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width)
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