Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4511DY-T1-GE3 SI4511DY-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 1095963-SI4511DY-T1-GE3
Packaging: Cut Reel
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 7.2A, 4.6A
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 18nC @ 4.5V
Maximum Rds On at Id,Vgs: 14.5 mOhm @ 9.6A, 10V
Alternative Parts (Cross-Reference): SI4511DY-T1-E3; DMC2020USD-13; SI4511DY-T1-GE3; Si4511DY-E3;
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

TRANSISTOR 7200 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Product overview: SI4511DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 7200 mA, 20 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 7200 mA, 20 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4511DY-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET N/P-CH 20V 7.2A 8-SOIC