Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4511DY-T1-E3 SI4511DY-T1-E3

Manufacturer: Vishay
Win Source Part Number: 107876-SI4511DY-T1-E3
Packaging: Cut Reel
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 7.2A, 4.6A
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 18nC @ 4.5V
Maximum Rds On at Id,Vgs: 14.5 mOhm @ 9.6A, 10V
Alternative Parts (Cross-Reference): DMC2020USD-13; SI4511DY-T1-GE3; Si4511DY-E3;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management

N/P-CH MOSFET 20V 4.6A 33mR SOIC Product overview: SI4511DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.6A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4511DY-T1-E3 can be used for catalog matching and distributor lookup.