Manufacturer: Vishay
Win Source Part Number: 107876-SI4511DY-T1-E
Packaging: Cut Reel
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 7.2A, 4.6A
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 18nC @ 4.5V
Maximum Rds On at Id,Vgs: 14.5 mOhm @ 9.6A, 10V
Alternative Parts (Cross-Reference): DMC2020USD-13; SI4511DY-T1-GE3; Si4511DY-E3;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management
MOSFET N/P-CH 20V 7.2A 8-SOIC
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 107876-SI4511DY-T1-E3 | SI4511DY-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4511DY-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | |
| V(BR)DSS | 20 volts | |
| PD | 1100 milliwatts |
