Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4501BDY-T1-GE3 SI4501BDY-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 042601-SI4501BDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Maximum Power Dissipation: 4.5W, 3.1W Drain-Source Breakdown Voltage: 30V, 8V Continuous Drain Current at 25°C: 12A, 8A Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 805pF @ 15V Maximum Rds On at Id,Vgs: 17 mOhm @ 10A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 042601-SI4501BDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Maximum Power Dissipation: 4.5W, 3.1W Drain-Source Breakdown Voltage: 30V, 8V Continuous Drain Current at 25°C: 12A, 8A Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 805pF @ 15V Maximum Rds On at Id,Vgs: 17 mOhm @ 10A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4501BDY-T1-GE3 - 042601-SI4501BDY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4501BDY-T1-GE3
042601-SI4501BDY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4501BDY-T1-GE3 042601-SI4501BDY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 042601-SI4501BDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Maximum Power Dissipation: 4.5W, 3.1W Drain-Source Breakdown Voltage: 30V, 8V Continuous Drain Current at 25°C: 12A, 8A Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 805pF @ 15V Maximum Rds On at Id,Vgs: 17 mOhm @ 10A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 042601-SI4501BDY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 4.5W, 3.1W
Drain-Source Breakdown Voltage: 30V, 8V
Continuous Drain Current at 25°C: 12A, 8A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 805pF @ 15V
Maximum Rds On at Id,Vgs: 17 mOhm @ 10A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
30V 8V 12A MOSFET Transistor
289-SI4501BDY-T1-GE3
30V 8V 12A MOSFET Transistor 289-SI4501BDY-T1-GE3
MOSFET N/P-CH 30V/8V 12A 8SOIC Product overview: SI4501BDY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8V, 12A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4501BDY-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET N/P-CH 30V/8V 12A 8SOIC Product overview: SI4501BDY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8V, 12A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4501BDY-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - SI4501BDY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4501BDY-T1-GE3TR-ND
FET, MOSFET Arrays SI4501BDY-T1-GE3TR-ND
Mosfet Array N and P-Channel, Common Drain 30V, 8V 12A, 8A 4.5W, 3.1W Surface Mount 8-SOIC

Mosfet Array N and P-Channel, Common Drain 30V, 8V 12A, 8A 4.5W, 3.1W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - SI4501BDY-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI4501BDY-T1-GE3
FET, MOSFET Arrays SI4501BDY-T1-GE3
MOSFET N/P-CH 30V/8V 8SOIC

MOSFET N/P-CH 30V/8V 8SOIC

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4501BDY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4501BDY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4501BDY-T1-GE3
MOSFET N/P-CH 30V/8V 12A 8SOIC

MOSFET N/P-CH 30V/8V 12A 8SOIC

Supplier's Site
MOSFET -8V Vds 8V Vgs SO-8 N&P PAIR

MOSFET -8V Vds 8V Vgs SO-8 N&P PAIR

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 042601-SI4501BDY-T1-GE3 289-SI4501BDY-T1-GE3 SI4501BDY-T1-GE3TR-ND SI4501BDY-T1-GE3 SI4501BDY-T1-GE3 SI4501BDY-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4501BDY-T1-GE3 30V 8V 12A MOSFET Transistor FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; N and P-Channel, Common Drain
V(BR)DSS 30 to 8 volts 30 to 8 volts
PD 4500 to 3100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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