Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4501ADY-T1-GE3 SI4501ADY-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 133393-SI4501ADY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.3W Drain-Source Breakdown Voltage: 30V, 8V Continuous Drain Current at 25°C: 6.3A, 4.1A Gate-Source Threshold Voltage: 1.8V @ 250μA Max Gate Charge: 20nC @ 5V Maximum Rds On at Id,Vgs: 18 mOhm @ 8.8A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 133393-SI4501ADY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.3W Drain-Source Breakdown Voltage: 30V, 8V Continuous Drain Current at 25°C: 6.3A, 4.1A Gate-Source Threshold Voltage: 1.8V @ 250μA Max Gate Charge: 20nC @ 5V Maximum Rds On at Id,Vgs: 18 mOhm @ 8.8A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4501ADY-T1-GE3 - 133393-SI4501ADY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4501ADY-T1-GE3
133393-SI4501ADY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4501ADY-T1-GE3 133393-SI4501ADY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 133393-SI4501ADY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.3W Drain-Source Breakdown Voltage: 30V, 8V Continuous Drain Current at 25°C: 6.3A, 4.1A Gate-Source Threshold Voltage: 1.8V @ 250μA Max Gate Charge: 20nC @ 5V Maximum Rds On at Id,Vgs: 18 mOhm @ 8.8A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 133393-SI4501ADY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 30V, 8V
Continuous Drain Current at 25°C: 6.3A, 4.1A
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 20nC @ 5V
Maximum Rds On at Id,Vgs: 18 mOhm @ 8.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFET N/P-CH 30V/8V 8-SOIC - 880-SI4501ADY-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET N/P-CH 30V/8V 8-SOIC
880-SI4501ADY-T1-GE3
MOSFET N/P-CH 30V/8V 8-SOIC 880-SI4501ADY-T1-GE3
MOSFET N/P-CH 30V/8V 8-SOIC

MOSFET N/P-CH 30V/8V 8-SOIC

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4501ADY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4501ADY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4501ADY-T1-GE3
MOSFET N/P-CH 30V/8V 6.3A 8SOIC

MOSFET N/P-CH 30V/8V 6.3A 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 133393-SI4501ADY-T1-GE3 880-SI4501ADY-T1-GE3 SI4501ADY-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4501ADY-T1-GE3 MOSFET N/P-CH 30V/8V 8-SOIC Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel
V(BR)DSS 30 to 8 volts 8 volts
PD 1300 milliwatts 1300 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data