N/P-Ch JFET, 8V Vds, 18mR Rds(on), SOIC Product overview: SI4501ADY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4501ADY-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028506-SI4501ADY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 30V, 8V
Continuous Drain Current at 25°C: 6.3A, 4.1A
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 20nC @ 5V
Maximum Rds On at Id,Vgs: 18 mOhm @ 8.8A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
MOSFET 30/8V 8.8/5.7A
MOSFET N/P-CH 30V/8V 6.3A 8SOIC
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI4501ADY-T1-E3 | 028506-SI4501ADY-T1-E3 | 880-SI4501ADY-T1-E3 | SI4501ADY-T1-E3 |
| Product Name | 8V SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4501ADY-T1-E3 | MOSFET 30/8V 8.8/5.7A | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | ||
| PD | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts | |
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| V(BR)DSS | 30 to 8 volts | 8 volts |
