Vishay Precision Group Single FETs, MOSFETs SI4497DY-T1-GE3

Description
P-Channel 30V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
P-Channel 30V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI4497DY-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4497DY-T1-GE3DKR-ND
Single FETs, MOSFETs SI4497DY-T1-GE3DKR-ND
P-Channel 30V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

P-Channel 30V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4497DY-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4497DY-T1-GE3CT-ND
Single FETs, MOSFETs SI4497DY-T1-GE3CT-ND
P-Channel 30V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

P-Channel 30V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4497DY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4497DY-T1-GE3TR-ND
Single FETs, MOSFETs SI4497DY-T1-GE3TR-ND
P-Channel 30V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

P-Channel 30V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4497DY-T1-GE3 - 028505-SI4497DY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4497DY-T1-GE3
028505-SI4497DY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4497DY-T1-GE3 028505-SI4497DY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028505-SI4497DY-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 285nC @ 10V Max Input Capacitance: 9685pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 028505-SI4497DY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 36A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 285nC @ 10V
Max Input Capacitance: 9685pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.3 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SI4497DY-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4497DY-T1-GE3
Single FETs, MOSFETs SI4497DY-T1-GE3
MOSFET P-CH 30V 36A 8SO

MOSFET P-CH 30V 36A 8SO

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4497DY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4497DY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4497DY-T1-GE3
MOSFET P-CH 30V 36A 8SO

MOSFET P-CH 30V 36A 8SO

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -30V Vds 20V Vgs SO-8

MOSFET -30V Vds 20V Vgs SO-8

Buy Now Datasheet
Trans Mosfet P-ch 30V 36A 8-PIN SOIC N T/r - 880-SI4497DY-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
Trans Mosfet P-ch 30V 36A 8-PIN SOIC N T/r
880-SI4497DY-T1-GE3
Trans Mosfet P-ch 30V 36A 8-PIN SOIC N T/r 880-SI4497DY-T1-GE3
Trans Mosfet P-ch 30V 36A 8-PIN SOIC N T/r

Trans Mosfet P-ch 30V 36A 8-PIN SOIC N T/r

Supplier's Site
Mosfet, P-Ch, -30V, -36A, Soic; Transistor Polarity Vishay - 01AC4997 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -30V, -36A, Soic; Transistor Polarity Vishay
01AC4997
Mosfet, P-Ch, -30V, -36A, Soic; Transistor Polarity Vishay 01AC4997
MOSFET, P-CH, -30V, -36A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-36A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power RoHS Compliant: Yes

MOSFET, P-CH, -30V, -36A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-36A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P Channel, -30V, -36A, Soic-8, Full Reel; Transistor Polarity Vishay - 86R3888 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -30V, -36A, Soic-8, Full Reel; Transistor Polarity Vishay
86R3888
Mosfet, P Channel, -30V, -36A, Soic-8, Full Reel; Transistor Polarity Vishay 86R3888
MOSFET, P CHANNEL, -30V, -36A, SOIC-8, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:36A; On Resistance Rds(on):0.0027ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes

MOSFET, P CHANNEL, -30V, -36A, SOIC-8, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:36A; On Resistance Rds(on):0.0027ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes

Supplier's Site
Mosfet, P-Ch, -30V, -36A, Soic; Transistor Polarity Vishay - 05AC9498 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -30V, -36A, Soic; Transistor Polarity Vishay
05AC9498
Mosfet, P-Ch, -30V, -36A, Soic; Transistor Polarity Vishay 05AC9498
MOSFET, P-CH, -30V, -36A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-36A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power RoHS Compliant: Yes

MOSFET, P-CH, -30V, -36A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-36A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P Channel, -30V, -36A, Soic-8; Channel Type Vishay - 04X9761 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -30V, -36A, Soic-8; Channel Type Vishay
04X9761
Mosfet, P Channel, -30V, -36A, Soic-8; Channel Type Vishay 04X9761
MOSFET, P CHANNEL, -30V, -36A, SOIC-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:36A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

MOSFET, P CHANNEL, -30V, -36A, SOIC-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:36A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI4497DY-T1-GE3DKR-ND 028505-SI4497DY-T1-GE3 SI4497DY-T1-GE3 SI4497DY-T1-GE3 SI4497DY-T1-GE3 880-SI4497DY-T1-GE3 01AC4997 86R3888 04X9761
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4497DY-T1-GE3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Trans Mosfet P-ch 30V 36A 8-PIN SOIC N T/r Mosfet, P-Ch, -30V, -36A, Soic; Transistor Polarity Vishay Mosfet, P Channel, -30V, -36A, Soic-8, Full Reel; Transistor Polarity Vishay Mosfet, P Channel, -30V, -36A, Soic-8; Channel Type Vishay
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154, 3.90mm Width) TO-3 TO-3 TO-3
V(BR)DSS 30 volts 30 volts -30 volts
PD 3500 to 7800 milliwatts 3500 milliwatts 3500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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