MOSFET P-CH 30V 36A 8SO
Manufacturer: Vishay
Win Source Part Number: 028505-SI4497DY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 36A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 285nC @ 10V
Max Input Capacitance: 9685pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.3 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
P-Channel 30V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC
P-Channel 30V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC
P-Channel 30V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC
MOSFET, P-CH, -30V, -36A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-36A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power RoHS Compliant: Yes
MOSFET, P CHANNEL, -30V, -36A, SOIC-8, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:36A; On Resistance Rds(on):0.0027ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET, P-CH, -30V, -36A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-36A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power RoHS Compliant: Yes
MOSFET, P CHANNEL, -30V, -36A, SOIC-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:36A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
Trans Mosfet P-ch 30V 36A 8-PIN SOIC N T/r
MOSFET P-CH 30V 36A 8SO
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI4497DY-T1-GE3 | 028505-SI4497DY-T1-GE3 | SI4497DY-T1-GE3DKR-ND | SI4497DY-T1-GE3 | 01AC4997 | 86R3888 | 04X9761 | 880-SI4497DY-T1-GE3 | SI4497DY-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4497DY-T1-GE3 | Single FETs, MOSFETs | MOSFET | Mosfet, P-Ch, -30V, -36A, Soic; Transistor Polarity Vishay | Mosfet, P Channel, -30V, -36A, Soic-8, Full Reel; Transistor Polarity Vishay | Mosfet, P Channel, -30V, -36A, Soic-8; Channel Type Vishay | Trans Mosfet P-ch 30V 36A 8-PIN SOIC N T/r | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||||
| V(BR)DSS | 30 volts | 30 volts | -30 volts | ||||||
| IDSS | 36000 milliamps | -36000 milliamps | 36000 milliamps | 36000 milliamps | |||||
| PD | 3500 milliwatts | 3500 to 7800 milliwatts | 3500 milliwatts |
