Manufacturer: Vishay
Win Source Part Number: 042600-SI4491EDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.1W (Ta), 6.9W (Tc)
Family Name: Si4491EDY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 17.3A (Ta)
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 153nC @ 10V
Max Input Capacitance: 4620pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 13A, 10V
Alternative Parts (Cross-Reference): TPC8127,LQ(M; FDS6673AZ-NL; FDS6673AZ; TPC8127;
Introduction Date: April 01, 2012
ECCN: EAR99
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
MOSFET P-CH 30V 17.3A 8-SO Product overview: SI4491EDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 17.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 17.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4491EDY-T1-GE3
P-Channel 30V 17.3A (Ta) 3.1W (Ta), 6.9W (Tc) Surface Mount 8-SOIC
P-Channel 30V 17.3A (Ta) 3.1W (Ta), 6.9W (Tc) Surface Mount 8-SOIC
P-Channel 30V 17.3A (Ta) 3.1W (Ta), 6.9W (Tc) Surface Mount 8-SOIC
MOSFET P-CH 30V 17.3A 8-SO
MOSFET, P-CH, 30V, 25.8A, SOIC ROHS COMPLIANT: YES
MOSFET P-CH 30V 17.3A 8SO
MOSFET P-CH 30V 17.3A 8SO
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 042600-SI4491EDY-T1-GE3 | 278-SI4491EDY-T1-GE3 | SI4491EDY-T1-GE3CT-ND | 880-SI4491EDY-T1-GE3 | SI4491EDY-T1-GE3 | 57AJ0443 | SI4491EDY-T1-GE3 | SI4491EDY-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4491EDY-T1-GE3 | 30V 17.3A MOSFET Transistor | Single FETs, MOSFETs | MOSFET P-CH 30V 17.3A 8-SO | MOSFET | Mosfet, P-Ch, 30V, 25.8A, Soic Rohs Compliant Vishay | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | |||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| PD | 3100 to 6900 milliwatts | 6900 milliwatts | 3100 milliwatts | 3100 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 | 8-SOIC (0.154", 3.90mm Width) | Surface Mount |
