Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - Si4490DY Si4490DY

Description
Manufacturer: Vishay Win Source Part Number: 091381-Si4490DY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.56W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2.85A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA (Min) Max Gate Charge: 42nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 80 mOhm @ 4A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 091381-Si4490DY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.56W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2.85A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA (Min) Max Gate Charge: 42nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 80 mOhm @ 4A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - Si4490DY - 091381-Si4490DY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - Si4490DY
091381-Si4490DY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - Si4490DY 091381-Si4490DY
Manufacturer: Vishay Win Source Part Number: 091381-Si4490DY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.56W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2.85A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA (Min) Max Gate Charge: 42nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 80 mOhm @ 4A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 091381-Si4490DY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.56W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 2.85A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA (Min)
Max Gate Charge: 42nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 80 mOhm @ 4A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 091381-Si4490DY
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - Si4490DY
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts
PD 1560 milliwatts
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