Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4490DY-T1-GE3 SI4490DY-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 028504-SI4490DY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.56W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 2.85A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA (Min)
Max Gate Charge: 42nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 80 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

N-Channel 200V 2.85A (Ta) 1.56W (Ta) Surface Mount 8-SOIC

N-Channel 200V 2.85A (Ta) 1.56W (Ta) Surface Mount 8-SOIC

N-Channel 200V 2.85A (Ta) 1.56W (Ta) Surface Mount 8-SOIC

MOSFET N-CH 200V 2.85A 8SO

N-Channel JFET, 200V, 2.85A, 80mR Rds(on), SOP-8 Product overview: SI4490DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 2.85A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 2.85A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4490DY-T1-GE3 can be used for catalog matching and distributor lookup.