N-Channel JFET, 200V, 2.85A, 80mR Rds(on), SOP-8 Product overview: SI4490DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 2.85A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 2.85A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4490DY-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028504-SI4490DY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.56W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 2.85A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA (Min)
Max Gate Charge: 42nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 80 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
N-Channel 200V 2.85A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
N-Channel 200V 2.85A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
N-Channel 200V 2.85A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
MOSFET N-CH 200V 2.85A 8SO
N CH MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.85A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET, N-CH, 200V, 2.85A, 150DEG C/3.1W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.85A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET N-CH 200V 2.85A 8SO
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI4490DY-T1-GE3 | 028504-SI4490DY-T1-GE3 | 742-SI4490DY-T1-GE3CT-ND | SI4490DY-T1-GE3 | SI4490DY-T1-GE3 | 15R5042 | SI4490DY-T1-GE3 |
| Product Name | N-Channel 200V 2.85A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4490DY-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | N Ch Mosfet, Full Reel; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 1560 milliwatts | 1560 milliwatts | 1560 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 200 volts | 200 volts |
