MOSFET N-CH 200V 2.85A 8SO
Manufacturer: Vishay
Win Source Part Number: 028503-SI4490DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.56W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 2.85A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA (Min)
Max Gate Charge: 42nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 80 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
N-CH MOSFET, 200V, 2.85A, 80mR Rds On, SOP-8 Product overview: SI4490DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 2.85A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 2.85A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4490DY-T1-E3 can be used for catalog matching and distributor lookup.
N-Channel 200V 2.85A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
N-Channel 200V 2.85A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
N-Channel 200V 2.85A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
MOSFET N-CH 200V 2.85A 8SO
N CHANNEL MOSFET, 200V, 4A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET, N CHANNEL, 200V, 2.85A, SOIC-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.85A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.56W RoHS Compliant: Yes
MOSFET RECOMMENDED ALT 781-SI4490DY-TR
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4490DY-T1-E3 | 028503-SI4490DY-T1-E3 | 278-SI4490DY-T1-E3 | SI4490DY-T1-E3DKR-ND | SI4490DY-T1-E3 | 06J7771 | 29X0537 | SI4490DY-T1-E3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4490DY-T1-E3 | 200V 2.85A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 200V, 4A, Soic; Channel Type Vishay | Mosfet, N Channel, 200V, 2.85A, Soic-8, Full Reel; Channel Type Vishay | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 200 volts | 200 volts | ||||||
| IDSS | 2850 milliamps | 4000 milliamps | 2850 milliamps |
