P-Channel 30V 11.6A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 128550-SI4487DY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11.6A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 1075pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 20.5 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
MOSFET P-CH 30V 11.6A 8SO Product overview: SI4487DY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 11.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 11.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4487DY-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 30V 11.6A 8-SOIC
MOSFET, P CHANNEL, -30V, -11.6A, SOIC-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:5W RoHS Compliant: Yes
MOSFET P-CH 30V 11.6A 8SO
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI4487DY-T1-GE3TR-ND | 128550-SI4487DY-T1-GE3 | 278-SI4487DY-T1-GE3 | 880-SI4487DY-T1-GE3 | 86R3887 | SI4487DY-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4487DY-T1-GE3 | 30V 11.6A MOSFET Transistor | MOSFET P-CH 30V 11.6A 8-SOIC | Mosfet, P Channel, -30V, -11.6A, Soic-8, Full Reel; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | |||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | Tape & Reel (TR) | TO-3 | 1075 pF @ 15 V | |
| V(BR)DSS | 30 volts | -30 volts | ||||
| PD | 2500 to 5000 milliwatts | 2500 milliwatts | 2500 milliwatts | 5000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
