Vishay Intertechnology, Inc. 100V 5.4A MOSFET Transistor SI4486EY-T1-GE3

MOSFET N-CH 100V 5.4A 8SO Product overview: SI4486EY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4486EY-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay Siliconix
Win Source Part Number: 726895-SI4486EY-T1-GE3
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 1.8W
Popularity: Low
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 5.4A
Rds On (Maximum) at Id, Vgs: 25mOhm at 7.9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA (Minimum)
Gate Charge (Qg) (Maximum) at Vgs: 44nC at 10V
Gate Source Voltage (Maximum): ±20V

N-Channel 100V 5.4A (Ta) 1.8W (Ta) Surface Mount 8-SOIC