P-Channel 30V 6A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC
P-Channel 30V 6A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC
P-Channel 30V 6A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC
P-Channel JFET, 30V, 5.9A ID, 42mR Rds(on), SOP-8 Product overview: SI4485DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 5.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4485DY-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1095961-SI4485DY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 590pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 42 mOhm @ 5.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
30V 6A 42mΩ@5.9A,10V 2.5V@250uA P Channel SOP-8 MOSFETs ROHS
MOSFET P-CH 30V 6A 8SO
MOSFET P-CH 30V 6A 8SO
MOSFET, P CHANNEL, -30V, -6A, SOIC-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:5W; Product Range:-RoHS Compliant: Yes
MOSFET, P CHANNEL, -30V, -6A, SOIC-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes
MOSFET 30V 6.0A 5.0W 42mohm @ 10V
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4485DY-T1-GE3DKR-ND | 278-SI4485DY-T1-GE3 | 1095961-SI4485DY-T1-GE3 | SI4485DY-T1-GE3 | SI4485DY-T1-GE3 | SI4485DY-T1-GE3 | 15R5040 | 05W6944 | SI4485DY-T1-GE3 |
| Product Name | Single FETs, MOSFETs | P-Channel 30V 5.9A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4485DY-T1-GE3 | Triode/MOS Tube/Transistor >> MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Channel, -30V, -6A, Soic-8, Full Reel; Channel Type Vishay | Mosfet, P Channel, -30V, -6A, Soic-8; Channel Type Vishay | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154, 3.90mm Width) | TO-3 | TO-3 | |||
| PD | 5000 milliwatts | 2400 to 5000 milliwatts | 2400 milliwatts | 2400 milliwatts | 5000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts |
