Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4484EY-T1-E3 SI4484EY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 092850-SI4484EY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 4.8A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA (Min) Max Gate Charge: 30nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 34 mOhm @ 6.9A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 092850-SI4484EY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 4.8A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA (Min) Max Gate Charge: 30nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 34 mOhm @ 6.9A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4484EY-T1-E3 - 092850-SI4484EY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4484EY-T1-E3
092850-SI4484EY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4484EY-T1-E3 092850-SI4484EY-T1-E3
Manufacturer: Vishay Win Source Part Number: 092850-SI4484EY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 4.8A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA (Min) Max Gate Charge: 30nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 34 mOhm @ 6.9A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 092850-SI4484EY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 4.8A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA (Min)
Max Gate Charge: 30nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 34 mOhm @ 6.9A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI4484EY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4484EY-T1-E3
Single FETs, MOSFETs SI4484EY-T1-E3
MOSFET N-CH 100V 4.8A 8SO

MOSFET N-CH 100V 4.8A 8SO

Supplier's Site Datasheet
Single FETs, MOSFETs - SI4484EY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4484EY-T1-E3TR-ND
Single FETs, MOSFETs SI4484EY-T1-E3TR-ND
N-Channel 100V 4.8A (Ta) 1.8W (Ta) Surface Mount 8-SOIC

N-Channel 100V 4.8A (Ta) 1.8W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4484EY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4484EY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4484EY-T1-E3
MOSFET N-CH 100V 4.8A 8SO

MOSFET N-CH 100V 4.8A 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 092850-SI4484EY-T1-E3 SI4484EY-T1-E3 SI4484EY-T1-E3TR-ND SI4484EY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4484EY-T1-E3 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 1800 milliwatts 1800 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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