P-Channel JFET, SOIC, -30V Vdss, 8.8mR Rds On, 13.5A ID Product overview: SI4483ADY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -30V, 13.5A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, 13.5A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4483ADY-T1-GE3
P-Channel 30V 19.2A (Tc) 2.9W (Ta), 5.9W (Tc) Surface Mount 8-SOIC
P-Channel 30V 19.2A (Tc) 2.9W (Ta), 5.9W (Tc) Surface Mount 8-SOIC
P-Channel 30V 19.2A (Tc) 2.9W (Ta), 5.9W (Tc) Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 028500-SI4483ADY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.9W (Ta), 5.9W (Tc)
Family Name: Si4483ADY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 19.2A (Tc)
Gate-Source Threshold Voltage: 2.6V @ 250μA
Max Gate Charge: 135nC @ 10V
Max Input Capacitance: 3900pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 8.8 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): FDS6679Z; FDS6679Z-NL; FDS6679Z-Q; FDS6679-NL;
Introduction Date: November 06, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
MOSFET P-CH 30V 19.2A 8SO
MOSFET Transistor, P Channel, -19.2 A, -30 V, 0.0127 ohm, -4.5 V, -2.1 V RoHS Compliant: Yes
MOSFET, P CHANNEL, -30V, 0.0127OHM, -19.2A, SOIC-8; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:19.2A; On Resistance Rds(on):0.0127ohm; Transistor Mounting:Surface Mount; No. of Pins:8PinsRoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4483ADY-T1-GE3 | SI4483ADY-T1-GE3CT-ND | 028500-SI4483ADY-T1-GE3 | SI4483ADY-T1-GE3 | SI4483ADY-T1-GE3 | 97W2656 | 85W3209 |
| Product Name | P-Channel -30V 13.5A SOIC MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4483ADY-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet Transistor, P Channel, -19.2 A, -30 V, 0.0127 Ohm, -4.5 V, -2.1 V Rohs Compliant Vishay | Mosfet, P Channel, -30V, 0.0127Ohm, -19.2A, Soic-8; Transistor Polarity Vishay |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| PD | 5900 milliwatts | 2900 to 5900 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | 135 nC @ 10 V | TO-3 | TO-3 |
