Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4480EY-T1-E3 SI4480EY-T1-E3

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092858-SI4480EY-T1- E3 Power Dissipation: 3 W Rise Time: 12.5 ns Fall Time: 22 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Continuous Drain Current (ID): 6.2 A Drain to Source Breakdown Voltage: 80 V Turn-Off Delay Time: 52 ns Drain to Source Resistance: 35 mΩ Gate to Source Voltage (Vgs): 20 V
Request a Quote
Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092858-SI4480EY-T1- E3 Power Dissipation: 3 W Rise Time: 12.5 ns Fall Time: 22 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Continuous Drain Current (ID): 6.2 A Drain to Source Breakdown Voltage: 80 V Turn-Off Delay Time: 52 ns Drain to Source Resistance: 35 mΩ Gate to Source Voltage (Vgs): 20 V
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4480EY-T1-E3 - 1092858-SI4480EY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4480EY-T1-E3
1092858-SI4480EY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4480EY-T1-E3 1092858-SI4480EY-T1-E3
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092858-SI4480EY-T1- E3 Power Dissipation: 3 W Rise Time: 12.5 ns Fall Time: 22 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Continuous Drain Current (ID): 6.2 A Drain to Source Breakdown Voltage: 80 V Turn-Off Delay Time: 52 ns Drain to Source Resistance: 35 mΩ Gate to Source Voltage (Vgs): 20 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1092858-SI4480EY-T1-E3
Power Dissipation: 3 W
Rise Time: 12.5 ns
Fall Time: 22 ns
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Low
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 175 °C
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Continuous Drain Current (ID): 6.2 A
Drain to Source Breakdown Voltage: 80 V
Turn-Off Delay Time: 52 ns
Drain to Source Resistance: 35 mΩ
Gate to Source Voltage (Vgs): 20 V

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1092858-SI4480EY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4480EY-T1-E3
V(BR)DSS 80 volts
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1464857P - RS Components, Ltd.
RS Components, Ltd.
Specs
Package Type VDFN
View Details
MOSFETs - 351988 - RS Components, Ltd.
Infineon Technologies AG
Specs
Package Type PG-TO247-4
View Details
2 suppliers
30 V, N-channel Trench MOSFET - BSH103BKR - Nexperia B.V.
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 1000 milliamps
View Details
5 suppliers
QUAD/DUAL N-CHANNEL ZERO THRESHOLD™ EPAD® PRECISION MATCHED PAIR MOSFET ARRAY - ALD110800ASCL - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Precision Zero Threshold
V(BR)DSS 10 volts
View Details
3 suppliers