Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4480EY-T1-E3 SI4480EY-T1-E3

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092858-SI4480EY-T1- E3 Power Dissipation: 3 W Rise Time: 12.5 ns Fall Time: 22 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Continuous Drain Current (ID): 6.2 A Drain to Source Breakdown Voltage: 80 V Turn-Off Delay Time: 52 ns Drain to Source Resistance: 35 mΩ Gate to Source Voltage (Vgs): 20 V
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Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092858-SI4480EY-T1- E3 Power Dissipation: 3 W Rise Time: 12.5 ns Fall Time: 22 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Continuous Drain Current (ID): 6.2 A Drain to Source Breakdown Voltage: 80 V Turn-Off Delay Time: 52 ns Drain to Source Resistance: 35 mΩ Gate to Source Voltage (Vgs): 20 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4480EY-T1-E3 - 1092858-SI4480EY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4480EY-T1-E3
1092858-SI4480EY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4480EY-T1-E3 1092858-SI4480EY-T1-E3
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092858-SI4480EY-T1- E3 Power Dissipation: 3 W Rise Time: 12.5 ns Fall Time: 22 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Continuous Drain Current (ID): 6.2 A Drain to Source Breakdown Voltage: 80 V Turn-Off Delay Time: 52 ns Drain to Source Resistance: 35 mΩ Gate to Source Voltage (Vgs): 20 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1092858-SI4480EY-T1-E3
Power Dissipation: 3 W
Rise Time: 12.5 ns
Fall Time: 22 ns
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Low
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 175 °C
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Continuous Drain Current (ID): 6.2 A
Drain to Source Breakdown Voltage: 80 V
Turn-Off Delay Time: 52 ns
Drain to Source Resistance: 35 mΩ
Gate to Source Voltage (Vgs): 20 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1092858-SI4480EY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4480EY-T1-E3
V(BR)DSS 80 volts
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