Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4466DY-T1-E3

Description
MOSFET N-CH 20V 9.5A 8SO
Request a Quote Datasheet
Description
MOSFET N-CH 20V 9.5A 8SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI4466DY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4466DY-T1-E3
Single FETs, MOSFETs SI4466DY-T1-E3
MOSFET N-CH 20V 9.5A 8SO

MOSFET N-CH 20V 9.5A 8SO

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4466DY-T1-E3 - 109682-SI4466DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4466DY-T1-E3
109682-SI4466DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4466DY-T1-E3 109682-SI4466DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 109682-SI4466DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 9.5A (Ta) Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 60nC @ 4.5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 9 mOhm @ 13.5A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 109682-SI4466DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 9.5A (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 60nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 9 mOhm @ 13.5A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
20V 9.5A MOSFET Transistor
278-SI4466DY-T1-E3
20V 9.5A MOSFET Transistor 278-SI4466DY-T1-E3
MOSFET N-CH 20V 9.5A 8SO Product overview: SI4466DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 9.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 9.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4466DY-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 9.5A 8SO Product overview: SI4466DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 9.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 9.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4466DY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - SI4466DY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4466DY-T1-E3TR-ND
Single FETs, MOSFETs SI4466DY-T1-E3TR-ND
N-Channel 20V 9.5A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

N-Channel 20V 9.5A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4466DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4466DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4466DY-T1-E3
MOSFET N-CH 20V 9.5A 8SO

MOSFET N-CH 20V 9.5A 8SO

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number SI4466DY-T1-E3 109682-SI4466DY-T1-E3 278-SI4466DY-T1-E3 SI4466DY-T1-E3TR-ND SI4466DY-T1-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4466DY-T1-E3 20V 9.5A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 9500 milliamps
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