Manufacturer: Vishay
Win Source Part Number: 064494-SI4464DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 240 mOhm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
N-Channel MOSFET, 200V, 1.7A, 240mR, SOP-8 Product overview: SI4464DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 1.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 1.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4464DY-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.195Ohm;ID 1.7A;SO-8;PD 1.5W;VGS +/-20V
MOSFET N-CH 200V 1.7A 8SO
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:1.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:2.5W RoHS Compliant: Yes
N CH MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:1.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET N-CH 200V 1.7A 8SO
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 064494-SI4464DY-T1-E3 | SI4464DY-T1-E3TR-ND | 278-SI4464DY-T1-E3 | 70026108 | SI4464DY-T1-E3 | SI4464DY-T1-E3 | 06J7747 | 35K3467 | SI4464DY-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4464DY-T1-E3 | Single FETs, MOSFETs | N-Channel 200V 1.7A MOSFET Transistor | MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.195Ohm;ID 1.7A;SO-8;PD 1.5W;VGS +/-20V | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet; Channel Type Vishay | N Ch Mosfet, Full Reel; Channel Type Vishay | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | ||||||
| PD | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | 2500 milliwatts | 1500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | SO-8 | 8-SOIC (0.154, 3.90mm Width) | TO-3 | TO-3 | 8-SOIC (0.154", 3.90mm Width) |
