Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4463CDY-T1-GE3 SI4463CDY-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 189894-SI4463CDY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.7W (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 13.6A (Ta), 49A (Tc)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 162nC @ 10V
Max Input Capacitance: 4250pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 8 mOhm @ 13A, 10V
Alternative Parts (Cross-Reference): IRF7410TRPBF; Si4477DY-T1-GE3; Si4477DY;
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

P-Channel 20V 13.6A (Ta), 49A (Tc) 2.7W (Ta), 5W (Tc) Surface Mount 8-SOIC

P-Channel 20V 13.6A (Ta), 49A (Tc) 2.7W (Ta), 5W (Tc) Surface Mount 8-SOIC

P-Channel 20V 13.6A (Ta), 49A (Tc) 2.7W (Ta), 5W (Tc) Surface Mount 8-SOIC

P-Channel JFET, 49A ID, -20V Vdss, 8mR Rds On, SOIC-8 Product overview: SI4463CDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 49A, -20V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 49A, -20V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4463CDY-T1-GE3 can be used for catalog matching and distributor lookup.