P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
MOSFET P-CH 20V 9.8A 8SO
P-Channel MOSFET, 9.8A ID, 20V Vdss, 11mR Rds On, SOIC-8 Product overview: SI4463BDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 9.8A, 20V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 9.8A, 20V, SOIC, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI4463BDY-T1-GE
Manufacturer: Vishay
Win Source Part Number: 741698-SI4463BDY-T1-
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Family Name: Si4463BDY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Manufacturer Homepage: www.vishay.com
Manufacturer Package: 8-SO
Channel Type Type: P
Drain Source Voltage: 20V
Vgs(th) (Maximum) @ Id: 1.4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 56nC @ 4.5V
Vgs (Maximum): ±12V
Power Dissipation (Maximum): 1.5W (Ta)
Rds On (Maximum) @ Id, Vgs: 11 mOhm @ 13.7A, 10V
Alternative Parts (Cross-Reference): FDS6575_NL; FDS6575_NF40; FDS6575_Q;
Introduction Date: March 09, 2004
ECCN: EAR99
Estimated EOL Date: 2021
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
P CHANNEL MOSFET, -20V, 13.7A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:13.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:2.5V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
P CHANNEL MOSFET, -20V, 13.7A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:13.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:2.5V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
MOSFET 20V 13.7A 3.0W 11mohm @ 10V
MOSFET 20V 13.7A 3.0W 11mohm @ 10V
MOSFET P-CH 20V 9.8A 8SO
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI4463BDY-T1-GE3CT-ND | SI4463BDY-T1-GE3 | 2088-SI4463BDY-T1-GE3 | 741698-SI4463BDY-T1-GE3 | 15R5028 | SI4463BDY-T1-GE3 | 880-SI4463BDY-T1-GE3 | SI4463BDY-T1-GE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | P-Channel 9.8A 20V SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4463BDY-T1-GE3 | P Channel Mosfet, -20V, 13.7A, Soic; Channel Type Vishay | MOSFET | MOSFET 20V 13.7A 3.0W 11mohm @ 10V | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SOT3 | TO-3 | 8-SOIC (0.154, 3.90mm Width) | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 20 volts | -20 volts | ||||||
| IDSS | 9800 milliamps | 13700 milliamps |
