The Vishay Si4463BDY is a P-channel MOSFET transistor designed for applications requiring a maximum drain-source voltage of -20 V and a continuous drain current of -9.8 A at 25 ¬8C. It features a low on-state resistance of 0.0085 Ohm at a gate-source voltage of -10 V, making it suitable for efficient power management. The device operates within a temperature range of -55 to 150 ¬8C and is RoHS compliant, ensuring it meets environmental standards. It has a gate threshold voltage of -1.4 V and supports a maximum power dissipation of 3.0 W at 25 ¬8C. The transistor is housed in a compact SO-8 package, facilitating easy integration into various electronic circuits.
P-Channel FET, 20V, 9.8A ID, 11mR Rds(on), SOIC Product overview: SI4463BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20V, 9.8A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 9.8A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4463BDY-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028497-SI4463BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 9.8A (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 56nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 11 mOhm @ 13.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
MOSFET P-CH 20V 9.8A 8SO
P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
MOSFET Transistor, P Channel, 9.8 A, 20 V, 0.0085 ohm, 12 V, -1.4 V RoHS Compliant: Yes
MOSFET P-CH 20V 9.8A 8-SOIC
MOSFET P-CH 20V 9.8A 8SO
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4463BDY-T1-E3 | 028497-SI4463BDY-T1-E3 | SI4463BDY-T1-E3 | SI4463BDY-T1-E3TR-ND | 61M9797 | 880-SI4463BDY-T1-E3 | SI4463BDY-T1-E3 | SI4463BDY-T1-E3 |
| Product Name | P-Channel 20V 9.8A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4463BDY-T1-E3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet Transistor, P Channel, 9.8 A, 20 V, 0.0085 Ohm, 12 V, -1.4 V Rohs Compliant Vishay | MOSFET P-CH 20V 9.8A 8-SOIC | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| PD | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||||
| Package Type | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 | 8-SOIC (0.154, 3.90mm Width) |
