The SI4459BDY-T1-GE3 is a P-Channel MOSFET designed for applications requiring high power density and efficiency. It features a maximum drain-source voltage of -30 V and a continuous drain current rating of 27.8 A at a case temperature of 25 ¬8C. The on-state resistance is low, with a maximum of 0.0049 Oc at a gate-source voltage of 10 V and 0.0082 Oc at 4.5 V, which contributes to reduced power losses during operation. This MOSFET is suitable for various applications, including battery management in mobile devices, adapter and charger switches, and load switching. It is packaged in an 8-SOIC format, making it suitable for surface mount technology. The device operates within a temperature range of -55 ¬8C to +150 ¬8C, ensuring reliability in diverse environments. The SI4459BDY-T1-GE3 is fully tested for gate resistance and dynamic characteristics, providing engineers with confidence in its performance. It is also lead-free and halogen-free, aligning with modern environmental standards.
Manufacturer: Vishay
Win Source Part Number: 933481-SI4459BDY-T1-
Series: TrenchFET® Gen IV
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 30 V 20.5A (Ta), 27.8A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SO
Package: 8-SOIC (0.154", 3.90mm Width)
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI4459
Categories: Discrete Semiconductor Products
Case / Package: 8-SO
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 85 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SI4459BDY-GE3, SI4459BDY-T1-GE3TR, SI4459BDY-T1-GE3DKR,
P-Channel 30V 20.5A (Ta), 27.8A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SO
P-Channel 30V 20.5A (Ta), 27.8A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SO
P-Channel 30V 20.5A (Ta), 27.8A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SO
Trans MOSFET P-CH 30V 20.5A 8-Pin SOIC N T/R Product overview: SI4459BDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20.5A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20.5A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4459BDY-T1-GE3
MOSFET P-CH 30V 20.5A/27.8A 8SO
(PRICE/TC) MOSFET, P-CH, -30V, -27.8A, SOIC; TRANSISTOR POLARITY:P CHANNEL; CONTINUOUS DRAIN CURRENT ID:-27.8A; DRAIN SOURCE VOLTAGE VDS:-30V; ON RESISTANCE RDS(ON):0.0041OHM; RDS(ON) TEST VOLTAGE VGS:-10V; THRESHOLD VOLTAGE VGS:-2.2V; POWER ROHS COMPLIAN. FREE 2 YEAR RADWELL WARRANTY
MOSFET, P-CH, -30V, -27.8A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-27.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0041ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.2V; Power RoHS Compliant: Yes
MOSFET P-CH 30V 20.5A/27.8A 8SO
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Radwell International | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 933481-SI4459BDY-T1-GE3 | SI4459BDY-T1-GE3DKR-ND | 278-SI4459BDY-T1-GE3 | SI4459BDY-T1-GE3 | 111572640 | 56AC6588 | SI4459BDY-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4459BDY-T1-GE3 | Single FETs, MOSFETs | 30V 20.5A SOIC MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | Mosfet, P-Ch, -30V, -27.8A, Soic; Transistor Polarity Vishay | Single FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | Tape and Reel | 84 nC @ 10 V | TO-3 | 8-SOIC (0.154", 3.90mm Width) | |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts |
