P-Channel 30V 29A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC
P-Channel 30V 29A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC
P-Channel 30V 29A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC
P-Channel MOSFET, 30V, 5mR Rds(on), 19.7A, SOIC-8 Product overview: SI4459ADY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 19.7A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 19.7A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4459ADY-T1-GE3
MOSFET P-CH 30V 29A 8SO
Manufacturer: Vishay
Win Source Part Number: 028496-SI4459ADY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Family Name: Si4459ADY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 29A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 195nC @ 10V
Max Input Capacitance: 6000pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): uPA2735GR-E2-AT; uPA2735GR-E1-AT; UPA2717AGR-E1-AT; IRF9317PbF;
Introduction Date: April 27, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Consumer Electronics
MOSFET, P-CH, 30V, 29A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:29A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Qualification:-RoHS Compliant: Yes
P CHANNEL MOSFET, -30V, 29A, SOIC, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:29A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
MOSFET P-CH 30V 29A 8SO
30V 29A 5mΩ@10V,15A 2.5V@250uA P Channel SOIC-8 MOSFETs ROHS
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4459ADY-T1-GE3CT-ND | 278-SI4459ADY-T1-GE3 | SI4459ADY-T1-GE3 | 028496-SI4459ADY-T1-GE3 | 1807291 | 23T8508 | 01P0978 | SI4459ADY-T1-GE3 | SI4459ADY-T1-GE3 | SI4459ADY-T1-GE3 |
| Product Name | Single FETs, MOSFETs | P-Channel 30V 19.7A SOIC MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4459ADY-T1-GE3 | MOSFETs | Mosfet, P-Ch, 30V, 29A, Soic; Channel Type Vishay | P Channel Mosfet, -30V, 29A, Soic, Full Reel; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | SO-8; SO-8 | TO-3 | TO-3 | 8-SOIC (0.154, 3.90mm Width) | |||
| PD | 7800 milliwatts | 3500 milliwatts | 3500 to 7800 milliwatts | 3500 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
