Vishay Precision Group Single FETs, MOSFETs SI4456DY-T1-E3

Description
MOSFET N-CH 40V 33A 8SO
Request a Quote Datasheet
Description
MOSFET N-CH 40V 33A 8SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI4456DY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4456DY-T1-E3
Single FETs, MOSFETs SI4456DY-T1-E3
MOSFET N-CH 40V 33A 8SO

MOSFET N-CH 40V 33A 8SO

Supplier's Site Datasheet
Single FETs, MOSFETs - SI4456DY-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4456DY-T1-E3DKR-ND
Single FETs, MOSFETs SI4456DY-T1-E3DKR-ND
N-Channel 40V 33A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

N-Channel 40V 33A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

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Single FETs, MOSFETs - SI4456DY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4456DY-T1-E3TR-ND
Single FETs, MOSFETs SI4456DY-T1-E3TR-ND
N-Channel 40V 33A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

N-Channel 40V 33A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4456DY-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4456DY-T1-E3CT-ND
Single FETs, MOSFETs SI4456DY-T1-E3CT-ND
N-Channel 40V 33A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

N-Channel 40V 33A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4456DY-T1-E3 - 116944-SI4456DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4456DY-T1-E3
116944-SI4456DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4456DY-T1-E3 116944-SI4456DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 116944-SI4456DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Family Name: Si4456DY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 2.8V @ 250μA Max Gate Charge: 122nC @ 10V Max Input Capacitance: 5670pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.8 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): TPC8045-H(TE12L,QM ; TPC8045-H; FDS8638; IRF7842TR; Introduction Date: May 12, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 116944-SI4456DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Family Name: Si4456DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 122nC @ 10V
Max Input Capacitance: 5670pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.8 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): TPC8045-H(TE12L,QM ; TPC8045-H; FDS8638; IRF7842TR;
Introduction Date: May 12, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 40V 33A 7.8W 3.8mohm @ 10V

MOSFET 40V 33A 7.8W 3.8mohm @ 10V

Buy Now Datasheet
N Channel Mosfet, 40V, 33A, Soic; Channel Type Vishay - 64M1992 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 40V, 33A, Soic; Channel Type Vishay
64M1992
N Channel Mosfet, 40V, 33A, Soic; Channel Type Vishay 64M1992
N CHANNEL MOSFET, 40V, 33A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:33A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes

N CHANNEL MOSFET, 40V, 33A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:33A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4456DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4456DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4456DY-T1-E3
MOSFET N-CH 40V 33A 8SO

MOSFET N-CH 40V 33A 8SO

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI4456DY-T1-E3 SI4456DY-T1-E3DKR-ND 116944-SI4456DY-T1-E3 SI4456DY-T1-E3 64M1992 SI4456DY-T1-E3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4456DY-T1-E3 MOSFET N Channel Mosfet, 40V, 33A, Soic; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts 40 volts
IDSS 33000 milliamps 33000 milliamps
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