Manufacturer: Vishay
Win Source Part Number: 116944-SI4456DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Family Name: Si4456DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 122nC @ 10V
Max Input Capacitance: 5670pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.8 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): TPC8045-H(TE12L,QM ; TPC8045-H; FDS8638; IRF7842TR;
Introduction Date: May 12, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
MOSFET N-CH 40V 33A 8SO
N-Channel 40V 33A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC
N-Channel 40V 33A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC
N-Channel 40V 33A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC
MOSFET 40V 33A 7.8W 3.8mohm @ 10V
MOSFET N-CH 40V 33A 8SO
N CHANNEL MOSFET, 40V, 33A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:33A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 116944-SI4456DY-T1-E3 | SI4456DY-T1-E3 | SI4456DY-T1-E3DKR-ND | SI4456DY-T1-E3 | SI4456DY-T1-E3 | 64M1992 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4456DY-T1-E3 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 40V, 33A, Soic; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 40 volts | 40 volts | ||||
| PD | 3500 to 7800 milliwatts | 3500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
