P-Channel MOSFET 150V 2A 295mR SOIC Surface Mount Product overview: SI4455DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, 150V, 2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 150V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4455DY-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1095951-SI4455DY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.1W (Ta), 5.9W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 2.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1190pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 295 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
MOSFET P-CH 150V 2.8A 8SO
P-Channel 150V 2.8A (Tc) 3.1W (Ta), 5.9W (Tc) Surface Mount 8-SOIC
P-Channel 150V 2.8A (Tc) 3.1W (Ta), 5.9W (Tc) Surface Mount 8-SOIC
P-Channel 150V 2.8A (Tc) 3.1W (Ta), 5.9W (Tc) Surface Mount 8-SOIC
150V 2.8A 295mΩ@10V,4A 4V@250uA P Channel SOIC-8 MOSFETs ROHS
MOSFET P-CH 150V 2.8A 8SO
MOSFET 150V 8.9A 5.9W 295mohm @ 10V
P-CHANNEL 150-V (D-S) MOSFET
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4455DY-T1-E3 | 1095951-SI4455DY-T1-E3 | SI4455DY-T1-E3 | SI4455DY-T1-E3TR-ND | SI4455DY-T1-E3 | SI4455DY-T1-E3 | 880-SI4455DY-T1-E3 | SI4455DY-T1-E3 | 33P5259 |
| Product Name | P-Channel SMD 150V 2A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4455DY-T1-E3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 150V 8.9A 5.9W 295mohm @ 10V | MOSFET | P-Channel 150-V (D-S) Mosfet Vishay |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||
| PD | 5900 milliwatts | 3100 to 5900 milliwatts | 3100 milliwatts | 3100 milliwatts | 3100 milliwatts | ||||
| TJ | -50 C (-58 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 150 volts | 150 volts | 150 volts | ||||||
| Package Type | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154, 3.90mm Width) | TO-3 |
