Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4451DY-T1-GE3

Description
P-Channel 12V 10A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
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Description
P-Channel 12V 10A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

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Single FETs, MOSFETs - SI4451DY-T1-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4451DY-T1-GE3-ND
Single FETs, MOSFETs SI4451DY-T1-GE3-ND
P-Channel 12V 10A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

P-Channel 12V 10A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4451DY-T1-GE3 - 794255-SI4451DY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4451DY-T1-GE3
794255-SI4451DY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4451DY-T1-GE3 794255-SI4451DY-T1-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 794255-SI4451DY-T1-G E3 Series: TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Family Name: SI4451DY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Manufacturer Package: 8-SO Channel Type Type: P Drain Source Voltage: 12V Vgs(th) (Maximum) @ Id: 800mV @ 850μA Gate Charge (Qg) (Maximum) @ Vgs: 120nC @ 4.5V Vgs (Maximum): ±8V Power Dissipation (Maximum): 1.5W (Ta) Rds On (Maximum) @ Id, Vgs: 8.25 mOhm @ 14A, 4.5V Introduction Date: February 15, 2003 ECCN: EAR99 Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited

Manufacturer: Vishay Siliconix
Win Source Part Number: 794255-SI4451DY-T1-GE3
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Family Name: SI4451DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Manufacturer Package: 8-SO
Channel Type Type: P
Drain Source Voltage: 12V
Vgs(th) (Maximum) @ Id: 800mV @ 850μA
Gate Charge (Qg) (Maximum) @ Vgs: 120nC @ 4.5V
Vgs (Maximum): ±8V
Power Dissipation (Maximum): 1.5W (Ta)
Rds On (Maximum) @ Id, Vgs: 8.25 mOhm @ 14A, 4.5V
Introduction Date: February 15, 2003
ECCN: EAR99
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4451DY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4451DY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4451DY-T1-GE3
MOSFET P-CH 12V 10A 8SO

MOSFET P-CH 12V 10A 8SO

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI4451DY-T1-GE3-ND 794255-SI4451DY-T1-GE3 SI4451DY-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4451DY-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel
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