Manufacturer: Vishay
Win Source Part Number: 102998-SI4446DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta)
Family Name: Si4446DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 3.9A (Ta)
Gate-Source Threshold Voltage: 1.6V @ 250μA
Max Gate Charge: 12nC @ 4.5V
Max Input Capacitance: 700pF @ 20V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 40 mOhm @ 5.2A, 10V
Alternative Parts (Cross-Reference): TPC8089-H,LQ(S; AO4450L; DMN4034SSS; TPC8089-H;
Introduction Date: March 07, 2006
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management
40V 3.9A N-CH MOSFET SOIC Surface Mount Product overview: SI4446DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 40V, 3.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 40V, 3.9A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4446DY-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 40V 3.9A 8SO
N-Channel 40V 3.9A (Ta) 1.1W (Ta) Surface Mount 8-SOIC
MOSFET N-CH 40V 3.9A 8SO
VISHAY SILICONIX SI4446DY-T1-E3 MOSFET Transistor, N Channel, 3.9 A, 40 V, 0.033 ohm, 10 V, 1.6 V
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 102998-SI4446DY-T1-E3 | 278-SI4446DY-T1-E3 | SI4446DY-T1-E3 | SI4446DY-T1-E3TR-ND | SI4446DY-T1-E3 | 880-SI4446DY-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4446DY-T1-E3 | SMD 40V 3.9A SOIC MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | VISHAY SILICONIX SI4446DY-T1-E3 MOSFET Transistor, N Channel, 3.9 A, 40 V, 0.033 ohm, 10 V, 1.6 V |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | |||
| PD | 1100 milliwatts | 1100 milliwatts | 1100 milliwatts | 1100 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | 700 pF @ 20 V |
