Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4446DY-T1-E3

Description
N-Channel 40V 3.9A (Ta) 1.1W (Ta) Surface Mount 8-SOIC
  • Single FETs, MOSFETs - SI4446DY-T1-E3TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SI4446DY-T1-E3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4446DY-T1-E3 - 102998-SI4446DY-T1-E3 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4446DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • VISHAY SILICONIX SI4446DY-T1-E3 MOSFET Transistor, N Channel, 3.9 A, 40 V, 0.033 ohm, 10 V, 1.6 V - 880-SI4446DY-T1-E3 - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
N-Channel 40V 3.9A (Ta) 1.1W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI4446DY-T1-E3TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4446DY-T1-E3TR-ND
Single FETs, MOSFETs SI4446DY-T1-E3TR-ND
N-Channel 40V 3.9A (Ta) 1.1W (Ta) Surface Mount 8-SOIC

N-Channel 40V 3.9A (Ta) 1.1W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4446DY-T1-E3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4446DY-T1-E3
Single FETs, MOSFETs SI4446DY-T1-E3
MOSFET N-CH 40V 3.9A 8SO

MOSFET N-CH 40V 3.9A 8SO

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4446DY-T1-E3 - 102998-SI4446DY-T1-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4446DY-T1-E3
102998-SI4446DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4446DY-T1-E3 102998-SI4446DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 102998-SI4446DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.1W (Ta) Family Name: Si4446DY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 3.9A (Ta) Gate-Source Threshold Voltage: 1.6V @ 250μA Max Gate Charge: 12nC @ 4.5V Max Input Capacitance: 700pF @ 20V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 40 mOhm @ 5.2A, 10V Alternative Parts (Cross-Reference): TPC8089-H,LQ(S; AO4450L; DMN4034SSS; TPC8089-H; Introduction Date: March 07, 2006 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 102998-SI4446DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta)
Family Name: Si4446DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 3.9A (Ta)
Gate-Source Threshold Voltage: 1.6V @ 250μA
Max Gate Charge: 12nC @ 4.5V
Max Input Capacitance: 700pF @ 20V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 40 mOhm @ 5.2A, 10V
Alternative Parts (Cross-Reference): TPC8089-H,LQ(S; AO4450L; DMN4034SSS; TPC8089-H;
Introduction Date: March 07, 2006
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4446DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4446DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4446DY-T1-E3
MOSFET N-CH 40V 3.9A 8SO

MOSFET N-CH 40V 3.9A 8SO

Supplier's Site
VISHAY SILICONIX SI4446DY-T1-E3 MOSFET Transistor, N Channel, 3.9 A, 40 V, 0.033 ohm, 10 V, 1.6 V - 880-SI4446DY-T1-E3 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
VISHAY SILICONIX SI4446DY-T1-E3 MOSFET Transistor, N Channel, 3.9 A, 40 V, 0.033 ohm, 10 V, 1.6 V
880-SI4446DY-T1-E3
VISHAY SILICONIX SI4446DY-T1-E3 MOSFET Transistor, N Channel, 3.9 A, 40 V, 0.033 ohm, 10 V, 1.6 V 880-SI4446DY-T1-E3
VISHAY SILICONIX SI4446DY-T1-E3 MOSFET Transistor, N Channel, 3.9 A, 40 V, 0.033 ohm, 10 V, 1.6 V

VISHAY SILICONIX SI4446DY-T1-E3 MOSFET Transistor, N Channel, 3.9 A, 40 V, 0.033 ohm, 10 V, 1.6 V

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI4446DY-T1-E3TR-ND SI4446DY-T1-E3 102998-SI4446DY-T1-E3 SI4446DY-T1-E3 880-SI4446DY-T1-E3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4446DY-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs VISHAY SILICONIX SI4446DY-T1-E3 MOSFET Transistor, N Channel, 3.9 A, 40 V, 0.033 ohm, 10 V, 1.6 V
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) SOT3; 8-SO 700 pF @ 20 V
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 40 volts 40 volts 40 volts
IDSS 3900 milliamps
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