N-Channel 30V 15A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
Manufacturer: Vishay Siliconix
Win Source Part Number: 806187-SI4442DY-T1-G
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 1.6W
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 4.5mOhm at 22A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 50nC at 4.5V
Current - Continuous Drain (Id) at 25°C: 15A
Vgs(th) (Maximum) at Id: 1.5V at 250μA
Maximum Vgs: ±12V
MOSFET N-CH 30V 15A 8SO Product overview: SI4442DY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 15A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 15A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4442DY-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET 30V 22A 3.5W 4.5mohm @ 10V
MOSFET N-CH 30V 15A 8SO
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:15A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V; Power Dissipation:1.6W RoHS Compliant: Yes
N CH MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:15A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V; Power Dissipation:1.6W RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4442DY-T1-GE3-ND | 806187-SI4442DY-T1-GE3 | 278-SI4442DY-T1-GE3 | SI4442DY-T1-GE3 | SI4442DY-T1-GE3 | 15R5019 | 84R8050 |
| Product Name | Single FETs, MOSFETs | FETs - Single - SI4442DY-T1-GE3 | 30V 15A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet; Channel Type Vishay | N Ch Mosfet; Channel Type Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3 | Tape & Reel (TR) | 8-SOIC (0.154, 3.90mm Width) | TO-3 | TO-3 | |
| PD | 1600 milliwatts | 1600 milliwatts | 1600 milliwatts | 1600 milliwatts |
