Manufacturer: Vishay
Win Source Part Number: 028493-SI4442DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 15A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 50nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 22A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
N-Channel JFET, 30V, 15A ID, 4.5mR Rds(on), SO Package Product overview: SI4442DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 15A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 15A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4442DY-T1-E3 can be used for catalog matching and distributor lookup.
N-Channel 30V 15A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
N-Channel 30V 15A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
N-Channel 30V 15A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
MOSFET N-CH 30V 15A 8SO
MOSFET N-CH 30V 15A 8SO
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:22A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV; Power Dissipation:3.5W RoHS Compliant: Yes
N CH MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:22A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V; Power Dissipation:3.5W RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028493-SI4442DY-T1-E3 | 278-SI4442DY-T1-E3 | SI4442DY-T1-E3TR-ND | SI4442DY-T1-E3 | SI4442DY-T1-E3 | 06J7735 | 35K3465 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4442DY-T1-E3 | N-Channel 30V 15A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet; Channel Type Vishay | N Ch Mosfet; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | |||||
| PD | 1600 milliwatts | 1600 milliwatts | 1600 milliwatts | 3500 milliwatts | 3500 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
