Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4438DY-T1-E3 SI4438DY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028492-SI4438DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 2.6V @ 250μA Max Gate Charge: 126nC @ 10V Max Input Capacitance: 4645pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.7 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 028492-SI4438DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 2.6V @ 250μA Max Gate Charge: 126nC @ 10V Max Input Capacitance: 4645pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.7 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4438DY-T1-E3 - 028492-SI4438DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4438DY-T1-E3
028492-SI4438DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4438DY-T1-E3 028492-SI4438DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 028492-SI4438DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 2.6V @ 250μA Max Gate Charge: 126nC @ 10V Max Input Capacitance: 4645pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.7 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028492-SI4438DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 36A (Tc)
Gate-Source Threshold Voltage: 2.6V @ 250μA
Max Gate Charge: 126nC @ 10V
Max Input Capacitance: 4645pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.7 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
30V 36A MOSFET Transistor
278-SI4438DY-T1-E3
30V 36A MOSFET Transistor 278-SI4438DY-T1-E3
MOSFET N-CH 30V 36A 8SO Product overview: SI4438DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4438DY-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 36A 8SO Product overview: SI4438DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4438DY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4438DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4438DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4438DY-T1-E3
MOSFET N-CH 30V 36A 8SO

MOSFET N-CH 30V 36A 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 028492-SI4438DY-T1-E3 278-SI4438DY-T1-E3 SI4438DY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4438DY-T1-E3 30V 36A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 3500 to 7800 milliwatts 3500 milliwatts
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