60V 6.1A 36mR N-CH MOSFET SOIC N Product overview: SI4436DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 6.1A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 6.1A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4436DY-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 064492-SI4436DY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 32nC @ 10V
Max Input Capacitance: 1100pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 36 mOhm @ 4.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management, Lighting
N-Channel 60V 8A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 60V 8A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 60V 8A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
MOSFET N-CH 60V 8A 8SO
MOSFET Transistor, N Channel, 8 A, 60 V, 0.03 ohm, 10 V, 2.5 V RoHS Compliant: Yes
N CHANNEL MOSFET, 60V, 8A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
N CHANNEL MOSFET, 60V, 8A, SOIC, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4436DY-T1-GE3 | 064492-SI4436DY-T1-GE3 | SI4436DY-T1-GE3TR-ND | SI4436DY-T1-GE3 | SI4436DY-T1-GE3 | 23T8507 | 85W3207 |
| Product Name | 60V 6.1A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4436DY-T1-GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet Transistor, N Channel, 8 A, 60 V, 0.03 Ohm, 10 V, 2.5 V Rohs Compliant Vishay | N Channel Mosfet, 60V, 8A, Soic; Channel Type Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| PD | 2500 milliwatts | 2500 to 5000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 60 volts |
