Manufacturer: Vishay
Win Source Part Number: 894549-SI4435FDY-T1-
Series: TrenchFET® Gen III
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 30 V 12.6A (Tc) 4.8W (Tc) Surface Mount 8-SOIC
Package: 8-SOIC (0.154", 3.90mm Width)
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI4435
Categories: Discrete Semiconductor Products
Case / Package: 8-SOIC
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 94 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SI4435FDY-T1-GE3DKR,
Small Signal Field-Effect Transistor, Product overview: SI4435FDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4435FDY-T1-GE3
MOSFET P-CH 30V 12.6A 8SOIC
P-Channel 30V 12.6A (Tc) 4.8W (Tc) Surface Mount 8-SOIC
P-Channel 30V 12.6A (Tc) 4.8W (Tc) Surface Mount 8-SOIC
P-Channel 30V 12.6A (Tc) 4.8W (Tc) Surface Mount 8-SOIC
MOSFET, P-CH, 30V, 12.6A, 150DEG C, 4.8W ROHS COMPLIANT: YES
P-CHANNEL 30-V (D-S) MOSFET
MOSFET P-CH 30V 12.6A 8SOIC
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 894549-SI4435FDY-T1-GE3 | 278-SI4435FDY-T1-GE3 | SI4435FDY-T1-GE3 | SI4435FDY-T1-GE3TR-ND | SI4435FDY-T1-GE3 | 75AH9203 | 26AK9923 | SI4435FDY-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4435FDY-T1-GE3 | MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, P-Ch, 30V, 12.6A, 150Deg C, 4.8W Rohs Compliant Vishay | P-Channel 30-V (D-S) Mosfet Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3; 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 | TO-3 | 8-SOIC (0.154, 3.90mm Width) | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
