Vishay Precision Group MOSFETs SI4435DDY-T1-GE3

Description
MOSFET P-Channel 30V 8.1A SOIC8
Request a Quote Datasheet
Description
MOSFET P-Channel 30V 8.1A SOIC8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 7103339 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7103339
MOSFETs 7103339
MOSFET P-Channel 30V 8.1A SOIC8

MOSFET P-Channel 30V 8.1A SOIC8

Supplier's Site
MOSFETs - 9190288 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9190288
MOSFETs 9190288
MOSFET P-Channel 30V 8.1A SOIC8

MOSFET P-Channel 30V 8.1A SOIC8

Supplier's Site
MOSFETs - 7103339P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7103339P
MOSFETs 7103339P
MOSFET P-Channel 30V 8.1A SOIC8

MOSFET P-Channel 30V 8.1A SOIC8

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4435DDY-T1-GE3 - 028487-SI4435DDY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4435DDY-T1-GE3
028487-SI4435DDY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4435DDY-T1-GE3 028487-SI4435DDY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028487-SI4435DDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Family Name: SI4435DDY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11.4A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 1350pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 24 mOhm @ 9.1A, 10V Alternative Parts (Cross-Reference): ZXM66P03N8TA; ZXM66P03N8TC; FSS162; Introduction Date: August 08, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Consumer Electronics

Manufacturer: Vishay
Win Source Part Number: 028487-SI4435DDY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Family Name: SI4435DDY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11.4A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 1350pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 9.1A, 10V
Alternative Parts (Cross-Reference): ZXM66P03N8TA; ZXM66P03N8TC; FSS162;
Introduction Date: August 08, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Consumer Electronics

Buy Now Datasheet
Single FETs, MOSFETs - SI4435DDY-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4435DDY-T1-GE3CT-ND
Single FETs, MOSFETs SI4435DDY-T1-GE3CT-ND
P-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

P-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4435DDY-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4435DDY-T1-GE3DKR-ND
Single FETs, MOSFETs SI4435DDY-T1-GE3DKR-ND
P-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

P-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4435DDY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4435DDY-T1-GE3TR-ND
Single FETs, MOSFETs SI4435DDY-T1-GE3TR-ND
P-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

P-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4435DDY-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4435DDY-T1-GE3
Single FETs, MOSFETs SI4435DDY-T1-GE3
MOSFET P-CH 30V 11.4A 8SO

MOSFET P-CH 30V 11.4A 8SO

Supplier's Site Datasheet
MOSFET -30V Vds 20V Vgs SO-8

MOSFET -30V Vds 20V Vgs SO-8

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI4435DDY-T1-GE3
Triode/MOS Tube/Transistor >> MOSFETs SI4435DDY-T1-GE3
30V 11.4A 24mΩ@10V,9.1A 3V@250uA P Channel SOIC-8 MOSFETs ROHS

30V 11.4A 24mΩ@10V,9.1A 3V@250uA P Channel SOIC-8 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4435DDY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4435DDY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4435DDY-T1-GE3
MOSFET P-CH 30V 11.4A 8SO

MOSFET P-CH 30V 11.4A 8SO

Supplier's Site
Mosfet Transistor, P Channel, -8.1 A, -30 V, 19.5 Mohm, -10 V, -3 V Rohs Compliant Vishay - 23T8506 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, -8.1 A, -30 V, 19.5 Mohm, -10 V, -3 V Rohs Compliant Vishay
23T8506
Mosfet Transistor, P Channel, -8.1 A, -30 V, 19.5 Mohm, -10 V, -3 V Rohs Compliant Vishay 23T8506
MOSFET Transistor, P Channel, -8.1 A, -30 V, 19.5 mohm, -10 V, -3 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, -8.1 A, -30 V, 19.5 mohm, -10 V, -3 V RoHS Compliant: Yes

Supplier's Site Datasheet
P Channel Mosfet,-30V,-8.1A, Soic-8, Full Reel; Channel Type Vishay - 15R5017 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet,-30V,-8.1A, Soic-8, Full Reel; Channel Type Vishay
15R5017
P Channel Mosfet,-30V,-8.1A, Soic-8, Full Reel; Channel Type Vishay 15R5017
P CHANNEL MOSFET,-30V,-8.1A, SOIC-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3VRoHS Compliant: Yes

P CHANNEL MOSFET,-30V,-8.1A, SOIC-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3VRoHS Compliant: Yes

Supplier's Site
P Channel Mosfet,-30V,-8.1A, Soic-8; Channel Type Vishay - 84R8049 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet,-30V,-8.1A, Soic-8; Channel Type Vishay
84R8049
P Channel Mosfet,-30V,-8.1A, Soic-8; Channel Type Vishay 84R8049
P CHANNEL MOSFET,-30V,-8.1A, SOIC-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

P CHANNEL MOSFET,-30V,-8.1A, SOIC-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  RS Components, Ltd. RS Components, Ltd. Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 7103339 7103339P 028487-SI4435DDY-T1-GE3 SI4435DDY-T1-GE3CT-ND SI4435DDY-T1-GE3 SI4435DDY-T1-GE3 SI4435DDY-T1-GE3 SI4435DDY-T1-GE3 23T8506 15R5017
Product Name MOSFETs MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4435DDY-T1-GE3 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, P Channel, -8.1 A, -30 V, 19.5 Mohm, -10 V, -3 V Rohs Compliant Vishay P Channel Mosfet,-30V,-8.1A, Soic-8, Full Reel; Channel Type Vishay
Polarity P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel
MOSFET Operating Mode Enhancement
Package Type Soic SOIC SOT3; 8-SO "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) Surface Mount TO-3 TO-3
Number of units in IC 1
V(BR)DSS 30 volts 30 volts 30 volts
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