P-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
P-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
P-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
MOSFET P-CH 30V 11.4A 8SO
Manufacturer: Vishay
Win Source Part Number: 028487-SI4435DDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Family Name: SI4435DDY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11.4A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 1350pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 9.1A, 10V
Alternative Parts (Cross-Reference): ZXM66P03N8TA; ZXM66P03N8TC; FSS162;
Introduction Date: August 08, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Consumer Electronics
MOSFET P-CH 30V 11.4A 8SO
MOSFET Transistor, P Channel, -8.1 A, -30 V, 19.5 mohm, -10 V, -3 V RoHS Compliant: Yes
P CHANNEL MOSFET,-30V,-8.1A, SOIC-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3VRoHS Compliant: Yes
P CHANNEL MOSFET,-30V,-8.1A, SOIC-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
30V 11.4A 24mΩ@10V,9.1A 3V@250uA P Channel SOIC-8 MOSFETs ROHS
| DigiKey | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4435DDY-T1-GE3CT-ND | 7103339 | 7103339P | SI4435DDY-T1-GE3 | 028487-SI4435DDY-T1-GE3 | SI4435DDY-T1-GE3 | SI4435DDY-T1-GE3 | 23T8506 | 15R5017 | SI4435DDY-T1-GE3 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4435DDY-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet Transistor, P Channel, -8.1 A, -30 V, 19.5 Mohm, -10 V, -3 V Rohs Compliant Vishay | P Channel Mosfet,-30V,-8.1A, Soic-8, Full Reel; Channel Type Vishay | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | Soic | SOIC | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | Surface Mount | TO-3 | TO-3 | ||
| MOSFET Operating Mode | Enhancement | |||||||||
| Number of units in IC | 1 | |||||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
