Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4435BDY-T1-E3

MOSFET P-CH 30V 7A 8SO

Manufacturer: Vishay
Win Source Part Number: 120241-SI4435BDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 70nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 9.1A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

P-Channel 30V 7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

MOSFET P-CH 30V 7A 8SO Product overview: SI4435BDY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4435BDY-T1-E3 can be used for catalog matching and distributor lookup.