Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4434DY-T1-E3

MOSFET N-CH 250V 2.1A 8SO

N-Channel 250V 2.1A (Ta) 1.56W (Ta) Surface Mount 8-SOIC

N-Channel 250V 2.1A (Ta) 1.56W (Ta) Surface Mount 8-SOIC

N-Channel 250V 2.1A (Ta) 1.56W (Ta) Surface Mount 8-SOIC

N-CH MOSFET 250V 2.1A 155mR SOIC Product overview: SI4434DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 2.1A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 2.1A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4434DY-T1-E3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 1249077-SI4434DY-T1-E3
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Family Name: Si4434DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Homepage: www.vishay.com
Manufacturer Package: 8-SO
Channel Type Type: N
Drain Source Voltage: 250V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 50nC @ 10V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1.56W (Ta)
Rds On (Maximum) @ Id, Vgs: 155 mOhm @ 3A, 10V
Alternative Parts (Cross-Reference): AON6458; TPH2010FNH; BSC16DN25NS3 G;
Introduction Date: November 18, 2003
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited